Photonics / Fotonik

Permanent URI for this collectionhttps://hdl.handle.net/11147/2590

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Browsing Photonics / Fotonik by Journal "ChemPhysChem"

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    Citation - WoS: 3
    Citation - Scopus: 3
    Monolayer Aste2: Stable Robust Metal in 2d, 1d and 0d
    (Wiley, 2018-09) Badalov, S. V.; Kandemir, Ali; Şahin, Hasan
    The structural, phononic, and electronic properties of the monolayer structures of AsTe2 are characterized by performing density functional theory (DFT) calculations. Total energy optimization and phonon calculations reveal that single layers of the 2H-AsTe2 and 1T-AsTe2 phases form dynamically stable crystal structures. Electronic structure analysis also shows that both 2H and 1T phases have nonmagnetic metallic character. It is also predicted that the metallic nature of the ultra-thin both 2H-AsTe2 and 1T-AsTe2 structures remain unchanged even under high biaxial strain values. For further examination of the dimensionality effect in the robust metallicity in 2D AsTe2 phases, electronic characteristics of 1D nanoribbons and 0D quantum dots are also investigated. It is found that independent from the dimension and crystallographic orientations 0D and 1D structures of 2H- and 1T-AsTe2 structures have metallic behavior. It is found that single layers of AsTe2 are quite promising materials for nanodevice applications owing to the robust metallic character.
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    Citation - WoS: 14
    Citation - Scopus: 14
    Quantum-Transport Characteristics of a P–n Junction on Single-Layer Tis3
    (John Wiley and Sons Inc., 2016-12) İyikanat, Fadıl; Senger, Ramazan Tuğrul; Peeters, François M.; Şahin, Hasan
    By using density functional theory and non-equilibrium Green′s function-based methods, we investigated the electronic and transport properties of a TiS3 monolayer p–n junction. We constructed a lateral p–n junction on a TiS3 monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3 p–n junction. In addition, the spin-dependent current–voltage characteristics of the constructed TiS3 p–n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3 p–n junction. These prominent conduction properties of the TiS3 p–n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.