Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/10118
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dc.contributor.authorGüneş, Mehmettr
dc.date.accessioned2021-01-24T18:32:24Z-
dc.date.available2021-01-24T18:32:24Z-
dc.date.issued1997-
dc.identifier.isbn0-7923-4667-X-
dc.identifier.urihttps://hdl.handle.net/11147/10118-
dc.identifier.urihttps://doi.org/10.1007/978-94-011-5592-2_24-
dc.descriptionNATO Advanced Research Workshop on Diamond Based Compositesen_US
dc.description.abstractIn this study, wide band gap a-Si1-x C-x:H alloy thin films prepared with and without hydrogen diluation of (SiH4, CH4) were characterized using optical absorption, dark conductivity, steady-state photoconductivity, sub-bandgap absorption obtained with both photothermal deflection spectroscopy (PDS) and dual beam photoconductivity (DBP), and electron spin resonance (ESR) techniques. Experimental results of steady-state photoconductivity and sub-bandgap absorption for different generation rates were analyzed using a detailed numerical model based on Simmons-Taylor statistics. The densities, energy location and nature of the native and light induced defect states in diluted and undiluted a-Si1-xCx:H alloy thin films were derived from the best fits to the experimental data. The extracted parameters for defect states were compared with those of a-Si:H films both in the annealed and light degraded states.en_US
dc.description.sponsorshipNATO, Off Naval Res, London, Univ Missouri Columbia, A F Ioffe Phys Tech Inst, Laben_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofDiamond Based Composites and Related Materialsen_US
dc.relation.ispartofseriesNATO Advanced Science Institute Series, Sub-Series 3, High Technology-
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleNative and light induced defect states in wide band gap hydrogenated amorphous silicon-carbon (a-Si1-xCx : H) alloy thin filmsen_US
dc.typeConference Objecten_US
dc.institutionauthorGüneş, Mehmettr
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume38en_US
dc.identifier.startpage285en_US
dc.identifier.endpage299en_US
dc.identifier.wosWOS:000072298200024en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/978-94-011-5592-2_24-
local.message.claim2022-06-16T11:25:11.962+0300|||rp01576|||submit_approve|||dc_contributor_author|||None*
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
item.openairetypeConference Object-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.languageiso639-1en-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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