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Title: Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications
Authors: Ketroussi, K.
Cherfi, R.
Yahia, Seba, H.
Tata, S.
Chabane, L.
Özyüzer, Lütfi
Rahal, A.
01. Izmir Institute of Technology
Keywords: a-Si: H(B) lightly hydrogenated
Micro bolometers
Thermal resistance coefficient
Thermal stability
Issue Date: 2020
Publisher: Elsevier Ltd.
Abstract: The objective of this study is to investigate the effect of boron doping concentration on the bolometric properties of lightly hydrogenated amorphous silicon doped with boron (a-Si: H(B)) films. Thin film a-Si: H(B) samples with different boron concentrations are prepared by co-sputtering of boron and silicon at relatively low hydrogen pressure. FTIR analyses show that the intensity of the characteristic peak of the substitutional boron gradually increases with the addition of boron. Increasing in boron concentration affects the bolometric properties of the lightly hydrogenated a-Si: H (B) films, including conductivity at room temperature (?RT) and thermal resistance coefficient (TCR). Indeed, when the boron concentration increases from 1.5 to 43%, ?RT increases from 1.4 10?6 to 2 10?3 ??1 cm?1 while the absolute value of TCR decreases from 3% to 8% K?1, respectively. In addition, lightly hydrogenated a-Si: H (B) films exhibit good thermal stability. We have showed in this study that lightly hydrogenated a-Si: H(B) can be considered as a potential candidate for low-cost, high-performance uncooled micro bolometers. © 2020 Elsevier B.V.
ISSN: 1350-4495
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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