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Title: Prevalence of oxygen defects in an in-plane anisotropic transition metal dichalcogenide
Authors: Plumadore, Ryan
Başkurt, Mehmet
Boddison-Chouinard, Justin
Lopinski, Gregory
Modarresi, Mohsen
Potasz, Pawel
Luican-Mayer, Adina
Şahin, Hasan
Issue Date: 2020
Publisher: American Physical Society
Abstract: Atomic scale defects in semiconductors enable their technological applications and realization of different quantum states. Using scanning tunneling microscopy and spectroscopy complemented by ab initio calculations we determine the nature of defects in the anisotropic van der Waals layered semiconductor ReS2. We demonstrate the in-plane anisotropy of the lattice by directly visualizing chains of rhenium atoms forming diamond-shaped clusters. Using scanning tunneling spectroscopy we measure the semiconducting gap in the density of states. We reveal the presence of lattice defects and by comparison of their topographic and spectroscopic signatures with ab initio calculations we determine their origin as oxygen atoms absorbed at lattice point defect sites. These results provide an atomic-scale view into the semiconducting transition metal dichalcogenides, paving the way toward understanding and engineering their properties.
ISSN: 2469-9950
Appears in Collections:Photonics / Fotonik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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