Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/10561
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dc.contributor.authorKuşdemir, Erdi-
dc.contributor.authorÖzkendir, Dilce-
dc.contributor.authorFırat, Volkan-
dc.contributor.authorÇelebi, Cem-
dc.date.accessioned2021-01-24T18:45:11Z-
dc.date.available2021-01-24T18:45:11Z-
dc.date.issued2015-
dc.identifier.issn0022-3727-
dc.identifier.issn1361-6463-
dc.identifier.urihttps://doi.org/10.1088/0022-3727/48/9/095104-
dc.identifier.urihttps://hdl.handle.net/10561-
dc.description.abstractWe present the fabrication and characterization of graphene-semiconductor-graphene ultraviolet photodetector based on the rectifying character of Schottky junction at the interface between epitaxial graphene and SiC semiconductor. As-grown single layer epitaxial graphene is interdigitated as transparent conductive electrode to probe photo-generated charge carriers in a semi-insulating 4H-SiC substrate. The fabricated device exhibits the typical current-voltage characteristics of a conventional metal-semiconductor-metal type photodetector with low leakage current. Time-resolved photocurrent measurements suggest an excellent photocurrent reversibility and high response speed of the device. The measurements performed for different illumination wavelengths showed that the sample reveals higher responsivity values when it is exposed to the light with 254 nm wavelength. The obtained results imply that epitaxial graphene can be used readily as transparent conductive electrode for SiC based optoelectronic device applications.en_US
dc.description.sponsorshipSabanci University Nanotechnology Research and Application Center (SUNUM)Sabanci University; Scientific and Technological Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [TBAG-112T773]en_US
dc.description.sponsorshipThe authors would like to thank Onur Serbest from Sabanci University Nanotechnology Research and Application Center (SUNUM) for his support and help during device fabrication processes. This work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under project Grant No. TBAG-112T773.en_US
dc.language.isoenen_US
dc.publisherIOP Publishing Ltd.en_US
dc.relation.ispartofJournal of Physics D: Applied Physicsen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectepitaxial grapheneen_US
dc.subjecttransparent electrodeen_US
dc.subject4H-SiCen_US
dc.subjectUV photodetectoren_US
dc.titleEpitaxial graphene contact electrode for silicon carbide based ultraviolet photodetectoren_US
dc.typeArticleen_US
dc.institutionauthorKuşdemir, Erdi-
dc.institutionauthorÖzkendir, Dilce-
dc.institutionauthorFırat, Volkan-
dc.institutionauthorÇelebi, Cem-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume48en_US
dc.identifier.issue9en_US
dc.identifier.wosWOS:000349680900005en_US
dc.identifier.scopus2-s2.0-84982839419en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1088/0022-3727/48/9/095104-
dc.relation.doi10.1088/0022-3727/48/9/095104en_US
dc.coverage.doi10.1088/0022-3727/48/9/095104en_US
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.grantfulltextnone-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeArticle-
item.languageiso639-1en-
item.fulltextNo Fulltext-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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