Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/11461
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dc.contributor.authorŞahin, Muhammet Feriten_US
dc.contributor.authorTaşcı, Enisen_US
dc.contributor.authorEmrullahoğlu, Mustafaen_US
dc.contributor.authorGökçe, Halilen_US
dc.contributor.authorTuğluoğlu, Nihaten_US
dc.contributor.authorEymur, Serkanen_US
dc.date.accessioned2021-11-06T09:49:33Z-
dc.date.available2021-11-06T09:49:33Z-
dc.date.issued2021-
dc.identifier.issn0921-4526-
dc.identifier.issn1873-2135-
dc.identifier.urihttps://doi.org/10.1016/j.physb.2021.413029-
dc.identifier.urihttps://hdl.handle.net/11147/11461-
dc.description.abstractA pi-conjugated 4,4-difluoro-4- bora-3a,4a-diaza-s-indacene (BODIPY) dimer (BOD-Dim) compound has been synthesized and characterized. The optimized molecular structure, the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) simulations, and static isotropic polarizability of the isolated compound were computed via the Gaussian program. The simulated static dielectric constant value was calculated. The effect of the BOD-Dim interlayer on the diode characteristics of the Au/n-Si diode was investigated. The electrical and photovoltaic parameters of the Au/BOD-Dim/n-Si/In diode such as ideality factor (n), barrier height (phi B), open-circuit voltage (Voc), short-circuit current (Jsc), photosensitivity (S), and photoresponsivity (R) have been investigated by current-voltage measurements at dark and under various illumination intensities. The possible current conduction mechanism has been examined through the forward bias ln (IF)-ln(VF) and ln(IR)-VR1/2 characteristics. All obtained results confirmed that Au/BOD-Dim/n-Si/In diode exhibits a photovoltaic behavior and presents great potential as a photosensor for optoelectronic device applications.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofPhysica B-Condensed Matteren_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectOrganic semiconductoren_US
dc.subjectBODIPYen_US
dc.subjectDFTen_US
dc.subjectSchottky diodeen_US
dc.subjectPhotodiodeen_US
dc.subjectHeterojunctionen_US
dc.titleElectrical, photodiode, and DFT studies of newly synthesized pi-conjugated BODIPY dye-based Au/BOD-Dim/n-Si deviceen_US
dc.typeArticleen_US
dc.authorid0000-0002-8221-2597en_US
dc.institutionauthorEmrullahoğlu, Mustafaen_US
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.identifier.volume614en_US
dc.identifier.wosWOS:000663075000007en_US
dc.identifier.scopus2-s2.0-85103779717en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.physb.2021.413029-
dc.contributor.affiliation01. Izmir Institute of Technologyen_US
dc.identifier.wosqualityQ3-
dc.identifier.scopusqualityQ2-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairetypeArticle-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Photonics / Fotonik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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