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https://hdl.handle.net/11147/11466
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DC Field | Value | Language |
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dc.contributor.author | Fidan, Mehmet | - |
dc.contributor.author | Ünverdi, Özhan | - |
dc.contributor.author | Çelebi, Cem | - |
dc.date.accessioned | 2021-11-06T09:49:34Z | - |
dc.date.available | 2021-11-06T09:49:34Z | - |
dc.date.issued | 2021 | - |
dc.identifier.issn | 0924-4247 | - |
dc.identifier.issn | 1873-3069 | - |
dc.identifier.uri | https://doi.org/10.1016/j.sna.2021.112829 | - |
dc.identifier.uri | https://hdl.handle.net/11147/11466 | - |
dc.description.abstract | This work reports the impact of junction area on the device performance parameters of Graphene/n-Silicon (Gr/n-Si) based Schottky photodiodes. Herein, three batches of Gr/n-Si photodiode samples were produced based on various sized CVD grown monolayer graphene layers transferred on individual n-Si substrates. The fabricated devices exhibited strong Schottky diode character and had high spectral sensi-tivity at 905 nm peak wavelength. The optoelectronic measurements showed that the spectral response of Gr/n-Si Schottky photodiodes has a linear dependence on the active junction area. The sample with 20 mm(2) junction area reached a spectral response of 0.76 AW(-1), which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples were found to be lowered as a function of the junction area. The experimental results demonstrated that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of the graphene electrode on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface. This study may serve towards the standardization of junction area for the development of high performance Gr/Si based optoelectronic devices such as solar cells and photodetectors operating in between the ultraviolet and near-infrared spectral region. (C) 2021 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | Yasar University Project Evaluation Commission (PEC) [BAP089] | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.relation.ispartof | Sensors and Actuators, A: Physical | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | Graphene | en_US |
dc.subject | Schottky junction | en_US |
dc.subject | Responsivity | en_US |
dc.subject | Detectivity | en_US |
dc.subject | Noise equivalent power | en_US |
dc.subject | Response speed | en_US |
dc.title | Junction area dependent performance of graphene/silicon based self-powered Schottky photodiodes | en_US |
dc.type | Article | en_US |
dc.authorid | 0000-0003-1070-1129 | - |
dc.institutionauthor | Fidan, Mehmet | - |
dc.institutionauthor | Çelebi, Cem | - |
dc.department | İzmir Institute of Technology. Physics | en_US |
dc.identifier.volume | 331 | en_US |
dc.identifier.wos | WOS:000700597700022 | en_US |
dc.identifier.scopus | 2-s2.0-85108910210 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.doi | 10.1016/j.sna.2021.112829 | - |
dc.identifier.wosquality | Q1 | - |
dc.identifier.scopusquality | Q1 | - |
item.openairetype | Article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
crisitem.author.dept | 04.05. Department of Pyhsics | - |
Appears in Collections: | Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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1-s2.0-S0924424721002922-main.pdf | 2.29 MB | Adobe PDF | View/Open |
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