Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/11466
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dc.contributor.authorFidan, Mehmet-
dc.contributor.authorÜnverdi, Özhan-
dc.contributor.authorÇelebi, Cem-
dc.date.accessioned2021-11-06T09:49:34Z-
dc.date.available2021-11-06T09:49:34Z-
dc.date.issued2021-
dc.identifier.issn0924-4247-
dc.identifier.issn1873-3069-
dc.identifier.urihttps://doi.org/10.1016/j.sna.2021.112829-
dc.identifier.urihttps://hdl.handle.net/11147/11466-
dc.description.abstractThis work reports the impact of junction area on the device performance parameters of Graphene/n-Silicon (Gr/n-Si) based Schottky photodiodes. Herein, three batches of Gr/n-Si photodiode samples were produced based on various sized CVD grown monolayer graphene layers transferred on individual n-Si substrates. The fabricated devices exhibited strong Schottky diode character and had high spectral sensi-tivity at 905 nm peak wavelength. The optoelectronic measurements showed that the spectral response of Gr/n-Si Schottky photodiodes has a linear dependence on the active junction area. The sample with 20 mm(2) junction area reached a spectral response of 0.76 AW(-1), which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples were found to be lowered as a function of the junction area. The experimental results demonstrated that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of the graphene electrode on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface. This study may serve towards the standardization of junction area for the development of high performance Gr/Si based optoelectronic devices such as solar cells and photodetectors operating in between the ultraviolet and near-infrared spectral region. (C) 2021 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipYasar University Project Evaluation Commission (PEC) [BAP089]en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrapheneen_US
dc.subjectSchottky junctionen_US
dc.subjectResponsivityen_US
dc.subjectDetectivityen_US
dc.subjectNoise equivalent poweren_US
dc.subjectResponse speeden_US
dc.titleJunction area dependent performance of graphene/silicon based self-powered Schottky photodiodesen_US
dc.typeArticleen_US
dc.authorid0000-0003-1070-1129-
dc.institutionauthorFidan, Mehmet-
dc.institutionauthorÇelebi, Cem-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume331en_US
dc.identifier.wosWOS:000700597700022en_US
dc.identifier.scopus2-s2.0-85108910210en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.sna.2021.112829-
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.openairetypeArticle-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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