Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/11466
Full metadata record
DC FieldValueLanguage
dc.contributor.authorFidan, Mehmet-
dc.contributor.authorÜnverdi, Özhan-
dc.contributor.authorÇelebi, Cem-
dc.date.accessioned2021-11-06T09:49:34Z-
dc.date.available2021-11-06T09:49:34Z-
dc.date.issued2021-
dc.identifier.issn0924-4247-
dc.identifier.issn1873-3069-
dc.identifier.urihttps://doi.org/10.1016/j.sna.2021.112829-
dc.identifier.urihttps://hdl.handle.net/11147/11466-
dc.description.abstractThis work reports the impact of junction area on the device performance parameters of Graphene/n-Silicon (Gr/n-Si) based Schottky photodiodes. Herein, three batches of Gr/n-Si photodiode samples were produced based on various sized CVD grown monolayer graphene layers transferred on individual n-Si substrates. The fabricated devices exhibited strong Schottky diode character and had high spectral sensi-tivity at 905 nm peak wavelength. The optoelectronic measurements showed that the spectral response of Gr/n-Si Schottky photodiodes has a linear dependence on the active junction area. The sample with 20 mm(2) junction area reached a spectral response of 0.76 AW(-1), which is the highest value reported in the literature for self-powered Gr/n-Si Schottky photodiodes without the modification of graphene electrode. In contrast to their spectral responsivities, the response speed of the samples were found to be lowered as a function of the junction area. The experimental results demonstrated that the device performance of Gr/n-Si Schottky photodiodes can be modified simply by changing the size of the graphene electrode on n-Si without need of external doping of graphene layer or engineering Gr/n-Si interface. This study may serve towards the standardization of junction area for the development of high performance Gr/Si based optoelectronic devices such as solar cells and photodetectors operating in between the ultraviolet and near-infrared spectral region. (C) 2021 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipYasar University Project Evaluation Commission (PEC) [BAP089]en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofSensors and Actuators, A: Physicalen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectGrapheneen_US
dc.subjectSchottky junctionen_US
dc.subjectResponsivityen_US
dc.subjectDetectivityen_US
dc.subjectNoise equivalent poweren_US
dc.subjectResponse speeden_US
dc.titleJunction area dependent performance of graphene/silicon based self-powered Schottky photodiodesen_US
dc.typeArticleen_US
dc.authorid0000-0003-1070-1129-
dc.institutionauthorFidan, Mehmet-
dc.institutionauthorÇelebi, Cem-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume331en_US
dc.identifier.wosWOS:000700597700022en_US
dc.identifier.scopus2-s2.0-85108910210en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.sna.2021.112829-
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeArticle-
item.languageiso639-1en-
item.fulltextWith Fulltext-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Files in This Item:
File SizeFormat 
1-s2.0-S0924424721002922-main.pdf2.29 MBAdobe PDFView/Open
Show simple item record



CORE Recommender

SCOPUSTM   
Citations

14
checked on Apr 5, 2024

WEB OF SCIENCETM
Citations

12
checked on Mar 30, 2024

Page view(s)

22,968
checked on Apr 22, 2024

Download(s)

6
checked on Apr 22, 2024

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.