Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/11468
Title: Comparison of characteristic properties of Al, Ga, and In-doped ZnO thin films formed by sol-gel method
Authors: Horzum, Şeyda
Bulduk, Emel
Şener, Deniz
Serin, Tülay
Keywords: Thin films
Sol-gel deposition
Raman spectroscopy
Issue Date: 2021
Publisher: Academic Press
Abstract: Herein, we examine the effect of doping with Indium (In), Gallium (Ga), and Aluminum (Al) (group III elements) on the structural, optical, and vibrational properties of ZnO thin films. The characteristic properties of the ZnO films prepared by the sol-gel dip-coating method are explored by utilizing X-ray diffraction, optical spectroscopy, and Raman scattering measurements. XRD analyzes exhibit that the crystallite size reduces upon doping by Ga and Al, while it increases with In, and all films have hexagonal wurtzite structure. Additionally, Raman measurements indicate that the dominant two peaks at around 104 and 445 cm(-1) are related to E(2)(low )and E-2(high) phonon modes of ZnO, respectively. The low-frequency mode (E-2(low)) is affected by dopant atoms, whereas the high-frequency mode (E-2(high)) of the wurtzite phase is not influenced by the dopant. Moreover, E-dop.atom phonon mode appears at low frequencies and the intensity ratio, I(E-dop.atom)/I(E(2)low), decreases as the ionic radius of dopant atoms increases. UV-Vis spectra reveal that the film transparency, optical band gap, Urbach energy, and refraction index can be effectively tuned by dopant atoms.
URI: https://doi.org/10.1016/j.spmi.2021.107034
https://hdl.handle.net/11147/11468
ISSN: 0749-6036
1096-3677
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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