Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/11475
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dc.contributor.authorTezcan, Ali Osman-
dc.contributor.authorEymur, Serkan-
dc.contributor.authorTaşcı, Enis-
dc.contributor.authorEmrullahoğlu, Mustafa-
dc.contributor.authorTuğluoğlu, Nihat-
dc.date.accessioned2021-11-06T09:49:34Z-
dc.date.available2021-11-06T09:49:34Z-
dc.date.issued2021-
dc.identifier.issn0957-4522-
dc.identifier.issn1573-482X-
dc.identifier.urihttps://doi.org/10.1007/s10854-021-05886-7-
dc.identifier.urihttps://hdl.handle.net/11147/11475-
dc.description.abstract4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (phi(b)) and series resistance (R-s) have been investigated through current-voltage (I-V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the phi(b) ranged from 0.86 to 0.90 eV as the illumination condition changed from dark to 100 mW/cm(2). Series resistance (R-s) values calculated using Cheung's method were found to decrease with increasing illumination level. The forward bias I-V characteristics of the diode were explained by the space charge limited current theory. The main photovoltaic parameters such as open circuit voltage (V-oc), short circuit current density (J(sc)) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a V-oc of 150 mV and J(sc) of 10 mu A/cm(2) under 100 mw/cm(2). In addition, photosensitivity and photoresponsivity properties of the diode were determined. All these results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.en_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDiodesen_US
dc.subjectPhotovoltaic parametersen_US
dc.titleInvestigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayeren_US
dc.typeArticleen_US
dc.authorid0000-0002-8221-2597-
dc.institutionauthorEmrullahoğlu, Mustafa-
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.identifier.volume32en_US
dc.identifier.issue9en_US
dc.identifier.startpage12513en_US
dc.identifier.endpage12520en_US
dc.identifier.wosWOS:000641681500006en_US
dc.identifier.scopus2-s2.0-85104509252en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/s10854-021-05886-7-
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ2-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Photonics / Fotonik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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