Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/11541
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dc.contributor.authorVarjovi, M. Jahangirzadeh-
dc.contributor.authorYağmurcukardeş, Mehmet-
dc.contributor.authorPeeters, François M.-
dc.contributor.authorDurgun, Engin-
dc.date.accessioned2021-11-06T09:54:38Z-
dc.date.available2021-11-06T09:54:38Z-
dc.date.issued2021-
dc.identifier.issn2469-9950-
dc.identifier.issn2469-9969-
dc.identifier.urihttps://doi.org/10.1103/PhysRevB.103.195438-
dc.identifier.urihttps://hdl.handle.net/11147/11541-
dc.description.abstractStructural symmetry breaking in two-dimensional materials can lead to superior physical properties and introduce an additional degree of piezoelectricity. In the present paper, we propose three structural phases (1H, 1T, and 1T') of Janus WXO (X = S, Se, and Te) monolayers and investigate their vibrational, thermal, elastic, piezoelectric, and electronic properties by using first-principles methods. Phonon spectra analysis reveals that while the 1H phase is dynamically stable, the 1T phase exhibits imaginary frequencies and transforms to the distorted 1T' phase. Ab initio molecular dynamics simulations confirm that 1H- and 1T'-WXO monolayers are thermally stable even at high temperatures without any significant structural deformations. Different from binary systems, additional Raman active modes appear upon the formation of Janus monolayers. Although the mechanical properties of 1H-WXO are found to be isotropic, they are orientation dependent for 1T'-WXO. It is also shown that 1H-WXO monolayers are indirect band-gap semiconductors and the band gap narrows down the chalcogen group. Except 1T'-WSO, 1T'-WXO monolayers have a narrow band gap correlated with the Peierls distortion. The effect of spin-orbit coupling on the band structure is also examined for both phases and the alteration in the band gap is estimated. The versatile mechanical and electronic properties of Janus WXO monolayers together with their large piezoelectric response imply that these systems are interesting for several nanoelectronic applications.en_US
dc.description.sponsorshipThis work was supported by the Scientific and Technological Research Council of Turkey (TUBITAK) under Project No. 117F383. The calculations were performed at TUBITAK ULAKBIM, High Performance and Grid Computing Center (TR-Grid e-Infrastructure) and the National Center for High Performance Computing of Turkey (UHeM) under Grant No. 5007092019. M.Y. was supported by the Flemish Science Foundation (FWO-Vl) by a postdoctoral fellowship.en_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.relation.ispartofPhysical Review Ben_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectMonolayersen_US
dc.subjectTransition metalsen_US
dc.titleJanus two-dimensional transition metal dichalcogenide oxides: First-principles investigation of WXO monolayers with X = S, Se, and Teen_US
dc.typeArticleen_US
dc.authorid0000-0002-1416-7990-
dc.institutionauthorYağmurcukardeş, Mehmet-
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.identifier.volume103en_US
dc.identifier.issue19en_US
dc.identifier.wosWOS:000655902600004en_US
dc.identifier.scopus2-s2.0-85107127943en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1103/PhysRevB.103.195438-
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ1-
dc.identifier.wosqualityttpTop10%en_US
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairetypeArticle-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Photonics / Fotonik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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