Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/13987
Title: High voltage response of graphene/4H-SiC UV photodetector with low level detection
Authors: Jehad, Ala K.
Ünverdi, Özhan
Çelebi, Cem
Keywords: Chemical vapor deposition
UV photodetector
Graphene
Spectral voltage responsivity
Response speed
Issue Date: 2023
Publisher: Elsevier
Abstract: A self-powered graphene/silicon carbide (G/4H-SiC) ultraviolet photodetector of a p-i-n like-structure with high voltage response has been fabricated to detect and measure low intensity ultraviolet (UV) radiation. Bilayer graphene sheet grown by chemical vapor deposition (CVD) method was transferred on the top of an epilayer structure of n-/n+ 4 H-SiC. In this structure, two Schottky contacts were formed: one at G/ n- 4H-SiC interface and the other at bulk-4 H-SiC/Cr/Au interface. The photodetector's characteristic measurements revealed low dark current of - 0.58 nA and spectral voltage responsivity of - 0.75 V/W at 300 nm wavelength. Under low level UV illumination of 300 nm wavelength, the photodetector exhibited a leakage current and a photogenerated response voltage of 1.1 nA and 10 mV, respectively. The time-dependent photovoltage measurements displayed a rapid photovoltage response with rise and decay times of -74 ns and - 580 ns, respectively. This novel device holds promise for applications requiring sensitive and self-powered UV detection.
URI: https://doi.org/10.1016/j.jallcom.2023.172288
https://hdl.handle.net/11147/13987
ISSN: 0925-8388
1873-4669
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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