Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/1970
Title: Developing a trilayer processing technique for superconducting YBa 2Cu3O7-? thin films by using Ge ion implantation
Authors: Avcı, İlbeyi
Tepe, Mustafa
Öktem, Bülent
Serincan, Uğur
Turan, Raşit
Abukay, Doğan
Keywords: Crystal structure
Crystalline materials
Diamagnetism
Electric conductivity
Epitaxial growth
Yttrium compounds
Issue Date: Apr-2005
Publisher: IOP Publishing Ltd.
Source: Avcı, İ., Tepe, M., Öktem, B., Serincan, U., Turan, R., and Abukay, D. (2005). Developing a trilayer processing technique for superconducting YBa 2Cu3O7-δ thin films by using Ge ion implantation. Superconductor Science and Technology, 18(4), 477-481. doi:10.1088/0953-2048/18/4/016
Abstract: For making trilayer superconducting devices based on YBa2Cu 3O7-δ (YBCO) thin film processing, we developed a new technique by employing Ge ion implantation. A YBCO thin film of 150 nm thickness having high c-axis orientation and a transition temperature, T c, of 90 K was implanted with 80 keV, 1 × 1016 Ge ions cm-2 at room temperature. By the result of TRIM calculation, Ge ions were found to penetrate into the YBCO thin film approximately 60 nm below the surface of the film, thus leaving the lower part of the film as a superconductor. Upon implantation with Ge ions, the implanted upper part of the sample lost its electrical conductivity and diamagnetism while its original crystalline structure was preserved. The implanted ions we found did not alter the overall crystal structure of the YBCO thin film; this allowed us to grow an epitaxial superconducting upper layer of YBCO on top of the implanted area, leaving no need to use any buffer layer. The superconducting properties of the upper layer were similar to those of the pure YBCO base layer with an increased room temperature resistivity and a lowered Tc (88 K). This process provides an effective method for fabrication of a trilayer HTS device structure.
URI: https://doi.org/10.1088/0953-2048/18/4/016
http://hdl.handle.net/11147/1970
ISSN: 0953-2048
0953-2048
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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