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https://hdl.handle.net/11147/2028
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DC Field | Value | Language |
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dc.contributor.author | Özdağ, Pınar | - |
dc.contributor.author | Atanassova, Elena | - |
dc.contributor.author | Güneş, Mehmet | - |
dc.date.accessioned | 2016-08-02T07:33:47Z | |
dc.date.available | 2016-08-02T07:33:47Z | |
dc.date.issued | 2005-02 | |
dc.identifier.citation | Özdağ, P., Atanassova, E., and Güneş, M. (2005). The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors. Journal of Optoelectronics and Advanced Materials, 7(1), 293-296. | en_US |
dc.identifier.issn | 1454-4164 | |
dc.identifier.issn | 1454-4164 | - |
dc.identifier.uri | http://hdl.handle.net/11147/2028 | |
dc.description.abstract | High dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystalline silicon wafers using an RF magnetron sputtering technique. Then, metal-oxide-semiconductor (Al-Ta 2O 5-Si) structures were formed with various oxide thickness from 15 to 25 nm. Devices were characterized using the high frequency capacitance-voltage (C-V) spectroscopy method. From the analysis of the high frequency C-V curves, non-ideal effects such as oxide charges and interface trap densities have been evaluated. The results for Ta 2O 5 layers have been compared with those for conventional SiO 2 layers. Interface trap densities were found to be 1.6 ± 0.4×10 12 eV -1 cm -2 for Ta 2O 5 and about 2×10 11 eV -1 cm -2 for SiO 2 insulating layers. There was no clear thickness dependence of the interface trap densities for the Ta 2O 5 insulating layers. | en_US |
dc.language.iso | en | en_US |
dc.publisher | National Institute of Optoelectronics | en_US |
dc.relation.ispartof | Journal of Optoelectronics and Advanced Materials | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Capacitance-voltage spectroscopy | en_US |
dc.subject | Metal-oxide-semiconductor (MOS) capacitors | en_US |
dc.subject | Tantalum pentoxide | en_US |
dc.subject | Annealing | en_US |
dc.title | The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors | en_US |
dc.type | Conference Object | en_US |
dc.authorid | TR1299 | en_US |
dc.institutionauthor | Özdağ, Pınar | - |
dc.institutionauthor | Güneş, Mehmet | - |
dc.department | İzmir Institute of Technology. Physics | en_US |
dc.identifier.volume | 7 | en_US |
dc.identifier.issue | 1 | en_US |
dc.identifier.startpage | 293 | en_US |
dc.identifier.endpage | 296 | en_US |
dc.identifier.wos | WOS:000228522700044 | en_US |
dc.identifier.scopus | 2-s2.0-15244358474 | en_US |
dc.relation.publicationcategory | Konferans Öğesi - Uluslararası - Kurum Öğretim Elemanı | en_US |
local.message.claim | 2022-06-16T11:22:40.679+0300 | * |
local.message.claim | |rp01576 | * |
local.message.claim | |submit_approve | * |
local.message.claim | |dc_contributor_author | * |
local.message.claim | |None | * |
dc.identifier.wosquality | Q4 | - |
dc.identifier.scopusquality | Q4 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.fulltext | With Fulltext | - |
item.openairetype | Conference Object | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
crisitem.author.dept | 04.05. Department of Pyhsics | - |
Appears in Collections: | Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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