Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2028
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dc.contributor.authorÖzdağ, Pınar-
dc.contributor.authorAtanassova, Elena-
dc.contributor.authorGüneş, Mehmet-
dc.date.accessioned2016-08-02T07:33:47Z
dc.date.available2016-08-02T07:33:47Z
dc.date.issued2005-02
dc.identifier.citationÖzdağ, P., Atanassova, E., and Güneş, M. (2005). The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors. Journal of Optoelectronics and Advanced Materials, 7(1), 293-296.en_US
dc.identifier.issn1454-4164
dc.identifier.issn1454-4164-
dc.identifier.urihttp://hdl.handle.net/11147/2028
dc.description.abstractHigh dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystalline silicon wafers using an RF magnetron sputtering technique. Then, metal-oxide-semiconductor (Al-Ta 2O 5-Si) structures were formed with various oxide thickness from 15 to 25 nm. Devices were characterized using the high frequency capacitance-voltage (C-V) spectroscopy method. From the analysis of the high frequency C-V curves, non-ideal effects such as oxide charges and interface trap densities have been evaluated. The results for Ta 2O 5 layers have been compared with those for conventional SiO 2 layers. Interface trap densities were found to be 1.6 ± 0.4×10 12 eV -1 cm -2 for Ta 2O 5 and about 2×10 11 eV -1 cm -2 for SiO 2 insulating layers. There was no clear thickness dependence of the interface trap densities for the Ta 2O 5 insulating layers.en_US
dc.language.isoenen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCapacitance-voltage spectroscopyen_US
dc.subjectMetal-oxide-semiconductor (MOS) capacitorsen_US
dc.subjectTantalum pentoxideen_US
dc.subjectAnnealingen_US
dc.titleThe effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitorsen_US
dc.typeConference Objecten_US
dc.authoridTR1299en_US
dc.institutionauthorÖzdağ, Pınar-
dc.institutionauthorGüneş, Mehmet-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume7en_US
dc.identifier.issue1en_US
dc.identifier.startpage293en_US
dc.identifier.endpage296en_US
dc.identifier.wosWOS:000228522700044en_US
dc.identifier.scopus2-s2.0-15244358474en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
local.message.claim2022-06-16T11:22:40.679+0300*
local.message.claim|rp01576*
local.message.claim|submit_approve*
local.message.claim|dc_contributor_author*
local.message.claim|None*
dc.identifier.wosqualityQ4-
dc.identifier.scopusqualityQ4-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.openairetypeConference Object-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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