Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2029
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dc.contributor.authorDönertaş, M. Elif-
dc.contributor.authorGüneş, Mehmet-
dc.date.accessioned2016-08-02T07:57:13Z
dc.date.available2016-08-02T07:57:13Z
dc.date.issued2005-02
dc.identifier.citationDönertaş, M. E., and Güneş, M. (2005). Light induced degradation of hydrogenated amorphous silicon - Germanium alloy (a-SiGe:H) thin films. Journal of Optoelectronics and Advanced Materials, 7(1), 503-506.en_US
dc.identifier.issn1454-4164
dc.identifier.issn1454-4164-
dc.identifier.urihttp://hdl.handle.net/11147/2029
dc.description.abstractHydrogenated amorphous silicon germanium alloy thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) with varying Germanium concentrations have been investigated in both the annealed and the light soaked state. Samples were characterized using steady state photoconductivity and dual beam photoconductivity (DBP). The Staebler-Wronski effect has been investigated by monitoring the changes in the photoconductivity, σ ph, and the increase in the sub-bandgap absorption coefficient, α. The kinetics of defect creation for different germanium contents has also been compared with those for unalloyed hydrogenated amorphous silicon films. It is found that for the films with low Ge fraction, both a decrease in the photoconductivity and an increase in α (1.0eV) show similar time dependences to those observed in a-Si:H films. However, as the Ge content increases, σ ph degrades faster and the same time dependence is not seen in the increase of α(1.0eV).en_US
dc.language.isoenen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAbsorption coefficienten_US
dc.subjectHydrogenated silicon germanium alloysen_US
dc.subjectPhotoconductivityen_US
dc.subjectStaebler-Wronski effecten_US
dc.subjectAmorphous siliconen_US
dc.titleLight induced degradation of hydrogenated amorphous silicon - Germanium alloy (a-SiGe:H) thin filmsen_US
dc.typeConference Objecten_US
dc.authoridTR1299en_US
dc.institutionauthorDönertaş, M. Elif-
dc.institutionauthorGüneş, Mehmet-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume7en_US
dc.identifier.issue1en_US
dc.identifier.startpage503en_US
dc.identifier.endpage506en_US
dc.identifier.wosWOS:000228522700095en_US
dc.identifier.scopus2-s2.0-15344350183en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
local.message.claim2022-06-16T11:22:40.679+0300|||rp01576|||submit_approve|||dc_contributor_author|||None*
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ2-
item.openairetypeConference Object-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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