Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2031
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dc.contributor.authorUlucan, Savaş-
dc.contributor.authorÖzyüzer, Gülnur Aygün-
dc.contributor.authorÖzyüzer, Lütfi-
dc.contributor.authorEğilmez, Mehmet-
dc.contributor.authorTuran, Raşit-
dc.date.accessioned2016-08-02T08:35:23Z-
dc.date.available2016-08-02T08:35:23Z-
dc.date.issued2005-02-
dc.identifier.citationUlucan, S., Aygün, G., Özyüzer, L., Eğilmez, M., and Turan, R. (2005). Properties of reactive O2 ion beam sputtered TiO2 on Si wafers. Journal of Optoelectronics and Advanced Materials, 7(1), 297-300.en_US
dc.identifier.issn1454-4164-
dc.identifier.urihttp://hdl.handle.net/11147/2031-
dc.description.abstractTiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of TiO2 were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400-4000 cm-1. An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited TiO2, the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of TiO2 are discussed.en_US
dc.language.isoenen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCMOSen_US
dc.subjectIon Beam Depositionen_US
dc.subjectSilicon wafersen_US
dc.subjectOptical chemical sensorsen_US
dc.titleProperties of reactive O2 ion beam sputtered TiO2 on Si wafersen_US
dc.typeConference Objecten_US
dc.authorid0000-0001-7630-3938en_US
dc.institutionauthorUlucan, Savaş-
dc.institutionauthorÖzyüzer, Lütfi-
dc.institutionauthorEğilmez, Mehmet-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume7en_US
dc.identifier.issue1en_US
dc.identifier.startpage297en_US
dc.identifier.endpage300en_US
dc.identifier.wosWOS:000228522700045en_US
dc.identifier.scopus2-s2.0-15244359472en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.identifier.scopusqualityQ2-
item.fulltextWith Fulltext-
item.openairetypeConference Object-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Sürdürülebilir Yeşil Kampüs Koleksiyonu / Sustainable Green Campus Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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