Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2035
Full metadata record
DC FieldValueLanguage
dc.contributor.authorOkur, Salih-
dc.contributor.authorGöktaş, Oktay-
dc.contributor.authorGüneş, Mehmet-
dc.contributor.authorFinger, Friedhelm-
dc.contributor.authorCarius, Reinhard-
dc.date.accessioned2016-08-02T12:33:37Z-
dc.date.available2016-08-02T12:33:37Z-
dc.date.issued2005-02-
dc.identifier.citationOkur, S., Göktaş, O., Güneş, M., Finger, F., and Carius, R. (2005). Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques. Journal of Optoelectronics and Advanced Materials, 7(1), 491-494.en_US
dc.identifier.issn1454-4164-
dc.identifier.urihttp://hdl.handle.net/11147/2035-
dc.description.abstractOpto-electronic properties of μc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane concentrations (SC) have been investigated using Raman spectroscopy, the steady-state photocarrier grating technique (SSPG), and the steady-state photoconductivity (SSPC). A correlation between the minority carrier transport properties and the microstructure has been found, using the dependence of the diffusion length (Ld) on the SC and Raman intensity ratio (I c RS) representing crystalline volume fractions. I C RS changes from 0.22 to 0.77. Ld increases with increasing Ic RS. It peaks around 0.5 with a maximum value of 270 nm, then decreases. Similar dependences of Ld on I C RS were obtained for films prepared by both HWCVD and VHF-PECVD. However, the grating quality factor measured on highly crystalline HWCVD films is substantially smaller than that found for VHF-PECVD films, indicating a relatively higher surface roughness present in the highly crystalline HWCVD films.en_US
dc.language.isoenen_US
dc.publisherNational Institute of Optoelectronicsen_US
dc.relation.ispartofJournal of Optoelectronics and Advanced Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDiffusion lengthen_US
dc.subjectMicrocrystalline silicon thin filmen_US
dc.subjectRaman spectroscopyen_US
dc.subjectSteady state photocarrier grating techniqueen_US
dc.subjectSiliconen_US
dc.titleMinority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniquesen_US
dc.typeConference Objecten_US
dc.authorid0000-0001-5159-7191en_US
dc.institutionauthorOkur, Salih-
dc.institutionauthorGöktaş, Oktay-
dc.institutionauthorGüneş, Mehmet-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume7en_US
dc.identifier.issue1en_US
dc.identifier.startpage491en_US
dc.identifier.endpage494en_US
dc.identifier.wosWOS:000228522700092en_US
dc.identifier.scopus2-s2.0-15244355301en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
local.message.claim2022-06-16T11:22:40.679+0300|||rp01576|||submit_approve|||dc_contributor_author|||None*
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ2-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.openairetypeConference Object-
crisitem.author.dept04.05. Department of Pyhsics-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Files in This Item:
File Description SizeFormat 
2035.pdfConference Paper157.32 kBAdobe PDFThumbnail
View/Open
Show simple item record



CORE Recommender

SCOPUSTM   
Citations

1
checked on Feb 16, 2024

WEB OF SCIENCETM
Citations

1
checked on Feb 17, 2024

Page view(s)

140
checked on Feb 23, 2024

Download(s)

38
checked on Feb 23, 2024

Google ScholarTM

Check





Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.