Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2140
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dc.contributor.authorAygün, Gülnur-
dc.contributor.authorTuran, Raşit-
dc.date.accessioned2016-09-19T10:37:35Z
dc.date.available2016-09-19T10:37:35Z
dc.date.issued2008-11-28
dc.identifier.citationAygün, G., and Turan, R. (2008). Electrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidation. Thin Solid Films, 517(2), 994-999. doi: 10.1016/j.tsf.2008.07.039en_US
dc.identifier.issn0040-6090
dc.identifier.issn0040-6090-
dc.identifier.urihttp://doi.org/10.1016/j.tsf.2008.07.039
dc.identifier.urihttp://hdl.handle.net/11147/2140
dc.description.abstractTantalum pentoxide (Ta2O5) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxidation of Ta deposited films with various thickness on Si. Fourier Transform Infrared (FTIR) spectrum, thickness distribution, dielectric and electrical properties of laser grown oxide layers have been studied. The effect of the sputtered Ta film thickness, laser beam energy density and the substrate temperature on the final Ta2O5 film structure has been determined. It is shown that the oxide layers obtained for the laser beam energy density in the range from 3.26 to 3.31 J/cm2 and the substrate temperature around 350 °C have superior properties. FTIR measurement demonstrates that the Ta2O5 layers are obtained with the laser assisted oxidation technique. Metal Oxide Semiconductor capacitors fabricated on the grown oxide layers exhibits typical Capacitance-Voltage, Conductance-Voltage and Current-Voltage characteristics. However, the density of oxide charges is found to be slightly higher than the typical values of thermally grown oxides. The conduction mechanism studied by Current-Voltage measurements of the capacitors indicated that the current flow through the oxide layer is modified Poole-Frenkel type. It is concluded that the Ta2O5 films formed by the technique of Nd:YAG laser-enhanced oxidation at relatively low substrate temperatures are potentially useful for device applications and their properties can be further improved by post oxidation annealing processes. © 2008 Elsevier B.Ven_US
dc.description.sponsorshipTÜBİTAK project number TBAG/U68en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofThin Solid Filmsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDielectric propertiesen_US
dc.subjectElectrical propertiesen_US
dc.subjectEllipsometryen_US
dc.subjectFourier Transform Infrared Spectroscopy (FTIR)en_US
dc.subjectOxide filmsen_US
dc.titleElectrical and dielectrical properties of tantalum oxide films grown by Nd:YAG laser assisted oxidationen_US
dc.typeArticleen_US
dc.authoridTR39698en_US
dc.authoridTR12873en_US
dc.institutionauthorAygün, Gülnur-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume517en_US
dc.identifier.issue2en_US
dc.identifier.startpage994en_US
dc.identifier.endpage999en_US
dc.identifier.wosWOS:000261693900102en_US
dc.identifier.scopus2-s2.0-55049092980en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.tsf.2008.07.039-
dc.relation.doi10.1016/j.tsf.2008.07.039en_US
dc.coverage.doi10.1016/j.tsf.2008.07.039en_US
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.openairetypeArticle-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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