Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2196
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dc.contributor.authorÖzyüzer, Gülnur Aygün-
dc.contributor.authorAtanassova, Elenada A.-
dc.contributor.authorKostov, K.-
dc.contributor.authorTuran, Raşit-
dc.date.accessioned2016-10-10T11:44:24Z
dc.date.available2016-10-10T11:44:24Z
dc.date.issued2006-08
dc.identifier.citationAygün, G., Atanassova, E. A., Kostov, K., and Turan, R. (2006). XPS study of pulsed Nd:YAG laser oxidized Si. Journal of Non-Crystalline Solids, 352(28-29), 3134-3139. doi:10.1016/j.jnoncrysol.2006.03.063en_US
dc.identifier.issn0022-3093
dc.identifier.issn0022-3093-
dc.identifier.urihttp://doi.org/10.1016/j.jnoncrysol.2006.03.063
dc.identifier.urihttp://hdl.handle.net/11147/2196
dc.description.abstractX-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented. The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxides in a relatively wide interfacial region is found. It is concluded that post-oxidation annealing is necessary in order to improve the microstructure of both oxide and near interface region.en_US
dc.description.sponsorshipTÜBİTAK TBAG/U68 and Bulgarian National Science Foundation under the contract F1508en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofJournal of Non-Crystalline Solidsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectNeodymium lasersen_US
dc.subjectLaser-matter interactionsen_US
dc.subjectLasersen_US
dc.subjectSiliconen_US
dc.subjectXPSen_US
dc.titleXPS study of pulsed Nd:YAG laser oxidized Sien_US
dc.typeArticleen_US
dc.authoridTR39698en_US
dc.institutionauthorÖzyüzer, Gülnur Aygün-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume352en_US
dc.identifier.issue28-29en_US
dc.identifier.startpage3134en_US
dc.identifier.endpage3139en_US
dc.identifier.wosWOS:000239375000029en_US
dc.identifier.scopus2-s2.0-33745877188en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.jnoncrysol.2006.03.063-
dc.relation.doi10.1016/j.jnoncrysol.2006.03.063en_US
dc.coverage.doi10.1016/j.jnoncrysol.2006.03.063en_US
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.openairetypeArticle-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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