Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2619
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dc.contributor.authorAktağ, Aliekber-
dc.contributor.authorYılmaz, Ercan-
dc.contributor.authorMogaddam, Nader A.P.-
dc.contributor.authorAygün, Gülnur-
dc.contributor.authorCantaş, Ayten-
dc.contributor.authorTuran, Raşit-
dc.date.accessioned2016-12-14T07:50:02Z-
dc.date.available2016-12-14T07:50:02Z-
dc.date.issued2010-11-
dc.identifier.citationAktağ, A., Yılmaz, E., Mogaddam, N. A.P., Aygün, G., Cantaş, A., and Turan, R. (2010). Ge nanocrystals embedded in SiO2 in MOS based radiation sensors. Nuclear Instruments and Methods in Physics Research, Section B, 268(22), 3417-3420. doi:10.1016/j.nimb.2010.09.007en_US
dc.identifier.issn0168-583X-
dc.identifier.urihttp://doi.org/10.1016/j.nimb.2010.09.007-
dc.identifier.urihttp://hdl.handle.net/11147/2619-
dc.description.abstractIn this work, the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated. SiO2 films containing nanoparticles of Ge were grown using the r.f.-magnetron sputtering technique. Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements. The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation. The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO2. The gamma radiation effects from 500 up to 4000 Gray were investigated. Capacitance-voltage measurements were performed and analyzed. Oxide traps and interface trap charges were calculated. Results show that MOS structure with Ge nanocrystals embedded in SiO2 is a good candidate to be used in radiation sensors, especially at high radiation doses. © 2010 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipAbant Izzet Baysal University, BAP.2008.03.02.289en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atomsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectRadiation effectsen_US
dc.subjectRaman spectroscopyen_US
dc.subjectGamma radiationen_US
dc.subjectGermaniumen_US
dc.subjectNanocrystalsen_US
dc.titleGe nanocrystals embedded in SiO2 in MOS based radiation sensorsen_US
dc.typeArticleen_US
dc.authoridTR39698en_US
dc.authoridTR140766en_US
dc.institutionauthorAygün, Gülnur-
dc.institutionauthorCantaş, Ayten-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume268en_US
dc.identifier.issue22en_US
dc.identifier.startpage3417en_US
dc.identifier.endpage3420en_US
dc.identifier.wosWOS:000284671000001en_US
dc.identifier.scopus2-s2.0-78049267779en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.nimb.2010.09.007-
dc.relation.doi10.1016/j.nimb.2010.09.007en_US
dc.coverage.doi10.1016/j.nimb.2010.09.007en_US
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ1-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.openairetypeArticle-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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