Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2785
Title: Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing
Authors: Şahin, D.
Yıldız, İlker
Gençer İmer, Arife
Aygün, Gülnur
Slaoui, A.
Turan, Raşit
Keywords: Germanium
Depth profiling
Raman spectroscopy
Segregation
X ray photoelectron spectroscopy
Publisher: Elsevier Ltd.
Source: Şahin, D., Yıldız, İ., Gençer İmer, A., Aygün, G., Slaoui, A., and Turan, R. (2010). Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing. Thin Solid Films, 518(9), 2365-2369. doi:10.1016/j.tsf.2009.09.156
Abstract: Use of germanium as a storage medium combined with a high-k dielectric tunneling oxide is of interest for non-volatile memory applications. The device structure consists of a thin HfO2 tunneling oxide with a Ge layer either in the form of continuous layer or discrete nanocrystals and relatively thicker SiO2 layer functioning as a control oxide. In this work, we studied interface properties and formation kinetics in SiO2/Ge/HfO2(Ge) multilayer structure during deposition and annealing. This material structure was fabricated by magnetron sputtering and studied by depth profiling with XPS and by Raman spectroscopy. It was observed that Ge atoms penetrate into HfO2 layer during the deposition and segregate out with annealing. This is related to the low solubility of Ge in HfO2 which is observed in other oxides as well. Therefore, Ge out diffusion might be an advantage in forming well controlled floating gate on top of HfO2. In addition we observed the Ge oxidation at the interfaces, where HfSiOx formation is also detected. © 2009 Elsevier B.V. All rights reserved.
URI: http://doi.org/10.1016/j.tsf.2009.09.156
http://hdl.handle.net/11147/2785
ISSN: 0040-6090
0040-6090
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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