Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2797
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dc.contributor.authorGüneş, Mehmet-
dc.contributor.authorYavaş, Mert-
dc.contributor.authorKlomfaß, Josef-
dc.contributor.authorFinger, Friedhelm-
dc.date.accessioned2017-01-16T12:55:36Z
dc.date.available2017-01-16T12:55:36Z
dc.date.issued2010-02
dc.identifier.citationGüneş, M., Yavaş, M. E. D., Klomfaß, J., and Finger, F. (2010). The effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin films. Journal of Materials Science: Materials in Electronics, 21(2), 153-159. doi:10.1007/s10854-009-9886-3en_US
dc.identifier.issn0957-4522
dc.identifier.issn0957-4522-
dc.identifier.urihttp://doi.org/10.1007/s10854-009-9886-3
dc.identifier.urihttp://hdl.handle.net/11147/2797
dc.description.abstractEffects of native and light induced defects states in hydrogenated amorphous silicon-germanium alloy thin films with different Ge concentrations have been investigated by using steady-state photoconductivity, dual beam photoconductivity (DBP), transmission spectroscopy and photothermal deflection spectroscopy (PDS) techniques. In the annealed state, sub-bandgap absorption spectra obtained from both PDS and DBP overlap very well at energies above 1.4 eV. However, differences in α (hν) spectrum exist in the lower energy part of absorption spectrum. The α (hν) value measured at 1.0 eV is the lowest for 10% Ge sample and increases gradually as Ge content of the sample increases. In the light soaked state, time dependence of photoconductivity decay obeys to t -x power law, where x changes from 0.30 to 0.60 for samples with low Ge content and 0.05-0.1 for samples with high Ge content. Correspondingly, the increase of the sub-bandgap absorption coefficient at lower energies obeys to t y power law, where y values are lower than the x value of the same sample. It can be inferred that sub-bandgap absorption and photoconductivity measurements are not controlled by the same set of defects created in the bandgap of alloys. © 2009 Springer Science+Business Media, LLC.en_US
dc.language.isoenen_US
dc.publisherSpringer Verlagen_US
dc.relation.ispartofJournal of Materials Science: Materials in Electronicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAbsorption spectroscopyen_US
dc.subjectAnnealed stateen_US
dc.subjectBand gapsen_US
dc.subjectDual beam photoconductivitiesen_US
dc.subjectOptoelectronic propertiesen_US
dc.subjectTime dependenceen_US
dc.titleThe effects of native and light induced defects on optoelectronic properties of hydrogenated amorphous silicon-germanium (a-SiGe:H) alloy thin filmsen_US
dc.typeArticleen_US
dc.authoridTR1299en_US
dc.institutionauthorGüneş, Mehmet-
dc.institutionauthorYavaş, Mert-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume21en_US
dc.identifier.issue2en_US
dc.identifier.startpage153en_US
dc.identifier.endpage159en_US
dc.identifier.wosWOS:000273753300009en_US
dc.identifier.scopus2-s2.0-77949264314en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/s10854-009-9886-3-
dc.relation.doi10.1007/s10854-009-9886-3en_US
dc.coverage.doi10.1007/s10854-009-9886-3en_US
local.message.claim2022-06-16T11:22:40.679+0300|||rp01576|||submit_approve|||dc_contributor_author|||None*
dc.identifier.scopusqualityQ2-
item.fulltextWith Fulltext-
item.openairetypeArticle-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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