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Title: Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers
Authors: Tokuç, Hüseyin
Tarı, Süleyman
Keywords: Tantalum pentoxide
Thin barriers
Barrier layer thickness
Ferromagnetic layers
High vacuum
Magnetron sputtering systems
Issue Date: Jan-2010
Publisher: Springer Verlag
Source: Tokuç, H., and Tarı, S. (2010). Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers. Applied Physics A: Materials Science and Processing, 98(1), 249-254. doi:10.1007/s00339-009-5389-6
Abstract: Fe/TaO x /Co trilayers were grown on Si(100)/SiO2 substrates and on tantalum buffer layers by a high vacuum magnetron sputtering system. The effects of both Ta buffer layer and tantalum-oxide barrier layer thickness on the structural and magnetic properties and the coupling of the ferromagnetic layers have been studied. It was observed that Ta improves the structural properties of the Fe layer resulting in an increased coercive field. For a barrier thickness of 4 nm a weak decoupling starts to appear between the ferromagnetic layers and a clear step formation is observed with increasing thickness. The minor hysteresis loops predict an interlayer coupling for thin barriers. The annealing of trilayers up to 250°C shows an increased coercivity for only the Fe layer. Annealing further at 400°C has the opposite effect of decreasing the coercivity, indicating intermixing at the interfaces of the Fe. The refractive index of the insulator barrier shows that the barrier layer is not totally in the form of tantalum-pentoxide. © 2009 Springer-Verlag.
ISSN: 0947-8396
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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