Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2817
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dc.contributor.authorYakuphanoğlu, Fahrettin-
dc.contributor.authorOkur, Salih-
dc.date.accessioned2017-01-19T06:58:46Z-
dc.date.available2017-01-19T06:58:46Z-
dc.date.issued2010-01-
dc.identifier.citationYakuphanoğlu, F., and Okur, S. (2010). Analysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I-V, C-V-f and G/ω-V-f techniques. Microelectronic Engineering, 87(1), 30-34. doi:10.1016/j.mee.2009.05.012en_US
dc.identifier.issn0167-9317-
dc.identifier.urihttp://doi.org/10.1016/j.mee.2009.05.012-
dc.identifier.urihttp://hdl.handle.net/11147/2817-
dc.description.abstractThe electronic parameters and interface state properties of boron dispersed triethanolamine/p-Si structure have been investigated by atomic force microscopy, I-V, C-V-f and G/ω-V-f techniques. The surface topography and phase image of the TEA-B film deposited onto p-Si substrate were analyzed by atomic force microscopy. The atomic force microscopy results show a homogenous distribution of boron particles in triethanolamine film. The electronic parameters (barrier height, ideality factor and average series resistance) obtained from I-V characteristics of the diode are 0.81 eV, 2.07 and 5.04 kΩ, respectively. The interface state density of the diode was found to be 2.54 × 1010 eV- cm-2 under Vg = 0. The obtained Dit values obtained from C-V and G/ω measurements are in agreement with each other. The profile of series resistance dependent on voltage and frequency confirms the presence of interface states in boron dispersed triethanolamine/p-Si structure. It is evaluated that the boron dispersed triethanolamine controls the electronic parameters and interface properties of conventional Al/p-Si diode. © 2009 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipNational Boron Research Institute (BOREN) (Project No. BOREN-2006-26-Ç25-19) and by State Planning Organization of Turkey (Project No. DPT2003K120390)en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofMicroelectronic Engineeringen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCrystal atomic structureen_US
dc.subjectBoronen_US
dc.subjectInterfacial state densityen_US
dc.subjectMetal/semiconductor contactsen_US
dc.titleAnalysis of electronic parameters and interface states of boron dispersed triethanolamine/p-Si structure by AFM, I-V, C-V-f and G/?-V-f techniquesen_US
dc.typeArticleen_US
dc.institutionauthorOkur, Salih-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume87en_US
dc.identifier.issue1en_US
dc.identifier.startpage30en_US
dc.identifier.endpage34en_US
dc.identifier.wosWOS:000272807000005en_US
dc.identifier.scopus2-s2.0-70350714135en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.mee.2009.05.012-
dc.relation.doi10.1016/j.mee.2009.05.012en_US
dc.coverage.doi10.1016/j.mee.2009.05.012en_US
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ1-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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