Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/3457
Title: Production and characterization of HfO2 high-k dielectric layers by sputtering technique
Authors: Aygün Özyüzer, Gülnur
Cantaş, Ayten
Issue Date: 2010
Publisher: Izmir Institute of Technology
Abstract: HfO2 thin films have been deposited on Si by in-situ spectroscopic ellipsometric sputtering technique. The grown films have been examined by various diagnostic and analysis techniques (Spectroscopic Ellipsometer (SE), FTIR, XRD, XPS). The optimization of in-situ SE sputtering system has been processed according to the measurement results of the grown HfO2 films. From the measurements simultaneously taken by using SE, film thickness, refractive index and real part of dielectric function have been examined as a function of deposition time. It was found that the thickness changes linearly with deposition time. The formation of undesired SiO2 interfacial layer has been tried to be prevented and searched by using FTIR. MOS capacitors from the oxides having best qualities have been produced to obtain electrical properties of grown oxides. The process of production-characterization and development of oxidation conditions have been achieved and the following results have been obtained: (a) Low O2/Ar gas ratio and 30-40 watt power have been considered as the most convenient oxidation parameters. (b) The formation of SiO2 interface has not been prevented but formation of HfxSiOy has been obtained. (c) The refractive index value (n.2.1) of bulk HfO2 at 632 nm has been obtained.
Description: Thesis (Master)--Izmir Institute of Technology, Physics, Izmir, 2010
Includes bibliographical references (leaves: 91-98)
Text in English; Abstract: Turkish and English
xiv, 98 leaves
URI: http://hdl.handle.net/11147/3457
Appears in Collections:Master Degree / Yüksek Lisans Tezleri

Files in This Item:
File Description SizeFormat 
T000233.pdfMasterThesis1.36 MBAdobe PDFThumbnail
View/Open
Show full item record



CORE Recommender

Page view(s)

36
checked on Nov 27, 2023

Download(s)

4
checked on Nov 27, 2023

Google ScholarTM

Check





Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.