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Title: Simultaneous quasiparticle and Josephson tunneling in BSCCO-2212 break junctions
Authors: Özyüzer, Lütfi
Miyakawa, Nobuaki
Zasadzinski, John F.
Yusof, Zikri M.
Romano, Pierom
Kendziora, Christopher A.
Hinks, David G.
Gray, Kenneth E.
Keywords: Superconducting materials
Bismuth compounds
Current voltage characteristics
Electric currents
Josephson junction devices
Issue Date: Jun-1999
Publisher: Institute of Electrical and Electronics Engineers Inc.
Source: Özyüzer, L., Miyakawa, N., Zasadzinski, J. F., Yusof, Z. M., Romano, P., Kendziora, C. A., Hinks, D. G., and Gray, K. E. (1999). Simultaneous quasiparticle and josephson tunneling in BSCCO-2212 break junctions. IEEE Transactions on Applied Superconductivity, 9(2), 2898-2901. doi:10.1109/77.783635
Abstract: Tunneling measurements are reported for superconductor-insulator-superconductor (SIS) break junctions on underdoped, optimally-doped, and overdoped single crystals of tSrsCaCiOs-).,! (Bi2212). The junction I -V characteristics exhibit welldefined quasiparticle current jumps at eV = 2A as well as hysteretic Josephson currents. The quasiparticle branch has been analyzed in the framework of dxa_y2 (d-wave) superconductivity and indicates that there is preferential tunneling along the lobe directions of the d-wave gap. For overdoped Bi-2212 with TC-62 K, the Josephson current is measured as a function of junction resistance, Rn, which varied by two orders of magnitude (1 kO to 100 kO). IcRn product is proportional to the 0.47 power of /c and displays a maximum of 7.0 mV. When the hole doping is decreased from overdoped (Tc=62 K) to the underdoped regime (Tc=70 K), the average IcRn product increases as does the quasiparticle gap. The maximum IcRn is ~ 40% of the A/e at each doping level, with a value as high as 25 mV in underdoped Bi-2212.
ISSN: 1051-8223
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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