Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4537
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dc.contributor.authorJohanson, Robert E.-
dc.contributor.authorGüneş, Mehmet-
dc.contributor.authorKasap, Safa O.-
dc.date.accessioned2016-04-22T08:28:03Z
dc.date.available2016-04-22T08:28:03Z
dc.date.issued2000-05
dc.identifier.citationJohanson, R. E., Güneş, M., and Kasap, S. O. (2000). 1/f Noise in doped and undoped amorphous silicon. Journal of Non-Crystalline Solids, 266-269(PART 1), 242-246. doi:10.1016/S0022-3093(99)00832-7en_US
dc.identifier.issn0022-3093
dc.identifier.issn0022-3093-
dc.identifier.urihttp://doi.org/10.1016/S0022-3093(99)00832-7
dc.identifier.urihttp://hdl.handle.net/11147/4537
dc.description.abstractWe measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amorphous silicon (a-Si:H) as a function of temperature. In general, the spectra can be fit to a power law, 1/fα, although in the p-type and undoped samples deviations from a strict power law occur. For n-type and p-type samples, the noise magnitude increases with temperature by approximately a factor of 5 from 295 to 450 K. The slope parameter, α, also increases with temperature in the p-type samples from near unity to 1.4 but not in the n-type sample where it remains near 1.05 independent of temperature. The undoped sample could be measured only over a limited range of elevated temperatures, but α does trend larger. The undoped and lightly doped material have similar noise levels but larger p-type doping reduces the noise by two orders of magnitude. Correlation measurements indicate the 1/f noise is Gaussian for all samples. However, intermittent random-telegraph noise is observed in n-type material.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofJournal of Non-Crystalline Solidsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectSiliconen_US
dc.subjectRandom-telegraph noiseen_US
dc.subjectElectronic noiseen_US
dc.title1/f Noise in doped and undoped amorphous siliconen_US
dc.typeArticleen_US
dc.authoridTR1299en_US
dc.institutionauthorGüneş, Mehmet-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume266-269en_US
dc.identifier.issuePART 1en_US
dc.identifier.startpage242en_US
dc.identifier.endpage246en_US
dc.identifier.wosWOS:000087189800045en_US
dc.identifier.scopus2-s2.0-0000709001en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/S0022-3093(99)00832-7-
dc.relation.doi10.1016/S0022-3093(99)00832-7en_US
dc.coverage.doi10.1016/S0022-3093(99)00832-7en_US
local.message.claim2022-06-16T11:18:52.542+0300|||rp01576|||submit_approve|||dc_contributor_author|||None*
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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