Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4673
Title: Conductance fluctuations in a-Si:H: Effects of alloying and device structure
Authors: Kasap, Safa O.
Güneş, Mehmet
Johanson, Robert E.
Wang, Q.
Yang, Jeffrey
Guha, Subhendu
Keywords: Silanes
Conductance noises
Alloying
Electrodes
Plasma enhanced chemical vapor deposition
Issue Date: Oct-2003
Publisher: Springer Verlag
Source: Kasap, S. O., Güneş, M., Johanson, R. E., Wang, Q., Yang, J., and Guha, S. (2003). Conductance fluctuations in a-Si:H: Effects of alloying and device structure. Journal of Materials Science: Materials in Electronics, 14(10-12), 693-696. doi:10.1023/A:1026127020267
Abstract: We present measurements of conductance noise in undoped a-Si:H and a-SiGe: H thin films in both a transverse and coplanar electrode geometry. For a-Si:H with coplanar electrodes, the noise spectrum is not a pure f-α power law but consists of two linear regions with different slope parameters α. The spectral shape and its temperature dependence are similar for all samples, regardless of the growth technique. Adding Ge results in qualitatively similar spectra; however, α at high frequencies and the temperature dependence are altered. For both a-Si:H and a-SiGe:H with transverse electrodes, the noise spectra are pure f-α power laws, and α decreases with the Ge content.
URI: http://doi.org/10.1023/A:1026127020267
http://hdl.handle.net/11147/4673
ISSN: 0957-4522
0957-4522
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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