Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/4681
Full metadata record
DC FieldValueLanguage
dc.contributor.authorJohanson, Robert E.-
dc.contributor.authorGüneş, Mehmet-
dc.contributor.authorKasap, Safa O.-
dc.date.accessioned2016-05-30T10:44:01Z-
dc.date.available2016-05-30T10:44:01Z-
dc.date.issued2003-08-
dc.identifier.citationJohanson, R. E., Güneş, M., and Kasap, S. O. (2003). 1/f noise in hydrogenated amorphous silicon-germanium alloys. IEE Proceedings: Circuits, Devices and Systems, 150(4), 345-349. doi:10.1049/ip-cds:20030749en_US
dc.identifier.issn1350-2409-
dc.identifier.urihttp://doi.org/10.1049/ip-cds:20030749-
dc.identifier.urihttp://hdl.handle.net/11147/4681-
dc.description.abstractMeasurements were made of conductance noise of a-Si:H and a-Si 1-xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloyinzg with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples.en_US
dc.description.sponsorshipNatural Sciences and Engineering Research Council of Canadaen_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.ispartofIEE Proceedings: Circuits, Devices and Systemsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectAmorphous siliconen_US
dc.subjectCoplanar electrodesen_US
dc.subjectHydrogenationen_US
dc.subjectSemiconducting germaniumen_US
dc.subjectSilanesen_US
dc.subjectSpurious signal noiseen_US
dc.title1/f noise in hydrogenated amorphous silicon-germanium alloysen_US
dc.typeConference Objecten_US
dc.authoridTR1299en_US
dc.institutionauthorGüneş, Mehmet-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume150en_US
dc.identifier.issue4en_US
dc.identifier.startpage345en_US
dc.identifier.endpage349en_US
dc.identifier.wosWOS:000186033600016en_US
dc.identifier.scopus2-s2.0-0142167954en_US
dc.relation.publicationcategoryKonferans Öğesi - Uluslararası - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1049/ip-cds:20030749-
dc.relation.doi10.1049/ip-cds:20030749en_US
dc.coverage.doi10.1049/ip-cds:20030749en_US
dc.identifier.wosqualityQ3-
item.openairetypeConference Object-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Files in This Item:
File Description SizeFormat 
4681.pdfConference Paper558.83 kBAdobe PDFThumbnail
View/Open
Show simple item record



CORE Recommender

SCOPUSTM   
Citations

10
checked on Apr 5, 2024

WEB OF SCIENCETM
Citations

6
checked on Mar 30, 2024

Page view(s)

61,486
checked on Apr 8, 2024

Download(s)

858
checked on Apr 8, 2024

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.