Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5108
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dc.contributor.authorRoeder, G.-
dc.contributor.authorLiu, S.-
dc.contributor.authorAygün, Gülnur-
dc.contributor.authorEvanschitzky, P.-
dc.contributor.authorErdmann, A.-
dc.contributor.authorSchellenberger, M.-
dc.contributor.authorPfitzner, L-
dc.date.accessioned2017-03-21T06:36:34Z
dc.date.available2017-03-21T06:36:34Z
dc.date.issued2011-02
dc.identifier.citationRoeder, G., Liu, S., Aygün, G., Evanschitzky, P., Erdmann, A., Schellenberger, M., and Pfitzner, L. (2011). Determination of the Dill parameters of thick positive resist for use in modeling applications. Thin Solid Films, 519(9), 2978-2984. doi:10.1016/j.tsf.2010.11.068en_US
dc.identifier.issn0040-6090
dc.identifier.issn0040-6090-
dc.identifier.urihttps://doi.org/10.1016/j.tsf.2010.11.068
dc.identifier.urihttp://hdl.handle.net/11147/5108
dc.description.abstractThe determination of Dill parameters of thick resist is very important to improve simulation models of resist exposure and real world processes. A new extraction technique of Dill parameters based on spectroscopic ellipsometry in combination with an advanced resist exposure model is proposed for thick resist analysis. The complex refractive index of the resist is related to the relative concentration of the photoactive compound in the resist in order to describe the vertical distribution of the refractive index and the extinction coefficient. Moreover, Dill parameters are extracted by directly fitting the bleaching curves to the measured ellipsometry data. The new approach was investigated experimentally by spectroscopic ellipsometry measurements on AZ5214E resist with two moderate layer thickness values in order to verify the accuracy of the new method. Dill parameters were extracted by using this new technique and by applying resist samples subjected to different exposure doses. Possible reasons for the variation of Dill parameters depending on resist thickness are explained. Furthermore, advantages, limitations and potential improvements of the model are discussed. Finally, the impact of Dill parameter variation on image formation in the resist is demonstrated by applying the spectroscopic ellipsometer analysis results as input parameters to the lithography simulator Dr.LiTHO.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofThin Solid Filmsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectDill parametersen_US
dc.subjectSimulationen_US
dc.subjectSpectroscopic ellipsometryen_US
dc.subjectThick resisten_US
dc.subjectComputer simulationen_US
dc.titleDetermination of the Dill parameters of thick positive resist for use in modeling applicationsen_US
dc.typeArticleen_US
dc.authoridTR39698en_US
dc.institutionauthorAygün, Gülnur-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume519en_US
dc.identifier.issue9en_US
dc.identifier.startpage2978en_US
dc.identifier.endpage2984en_US
dc.identifier.wosWOS:000289174200090en_US
dc.identifier.scopus2-s2.0-79952620550en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.tsf.2010.11.068-
dc.relation.doi10.1016/j.tsf.2010.11.068en_US
dc.coverage.doi10.1016/j.tsf.2010.11.068en_US
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.openairetypeArticle-
item.cerifentitytypePublications-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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