Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5759
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dc.contributor.authorCantaş, Ayten-
dc.contributor.authorÖzyüzer, Gülnur Aygün-
dc.contributor.authorBasa, Deepak Kumar-
dc.date.accessioned2017-06-14T07:12:55Z-
dc.date.available2017-06-14T07:12:55Z-
dc.date.issued2014-08-28-
dc.identifier.citationCantaş, A., Aygün, G., and Basa, D.K. (2014). In-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputtering. Journal of Applied Physics, 116(8). doi:10.1063/1.4893708en_US
dc.identifier.issn0021-8979-
dc.identifier.issn1089-7550-
dc.identifier.urihttps://doi.org/10.1063/1.4893708-
dc.identifier.urihttp://hdl.handle.net/11147/5759-
dc.description.abstractWe have investigated the reduction of unwanted interfacial SiO2 layer at HfO2/Si interface brought about by the deposition of thin Hf metal buffer layer on Si substrate prior to the deposition of HfO2 thin films for possible direct contact between HfO2 thin film and Si substrate, necessary for the future generation devices based on high-κ HfO2 gate dielectrics. Reactive rf magnetron sputtering system along with the attached in-situ spectroscopic ellipsometry (SE) was used to predeposit Hf metal buffer layer as well as to grow HfO2 thin films and also to undertake the in-situ characterization of the high-κ HfO2 thin films deposited on n-type 〈100〉 crystalline silicon substrate. The formation of the unwanted interfacial SiO2 layer and its reduction due to the predeposited Hf metal buffer layer as well as the depth profiling and also structure of HfO2 thin films were investigated by in-situ SE, Fourier Transform Infrared spectroscopy, and Grazing Incidence X-ray Diffraction. The study demonstrates that the predeposited Hf metal buffer layer has played a crucial role in eliminating the formation of unwanted interfacial layer and that the deposited high-κ HfO2 thin films are crystalline although they were deposited at room temperature.en_US
dc.description.sponsorshipThe Scientific and Technological Research Council of Turkey (107T117--113F349); Izmir Institute of Technology (2008 IYTE 37)en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/TBAG/107T117en_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/MFAG/113F349en_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectBuffer layersen_US
dc.subjectFourier transform infrared spectroscopyen_US
dc.subjectGate dielectricsen_US
dc.subjectDepositionen_US
dc.subjectHafnium oxidesen_US
dc.subjectMagnetron sputteringen_US
dc.titleIn-situ spectroscopic ellipsometry and structural study of HfO2 thin films deposited by radio frequency magnetron sputteringen_US
dc.typeArticleen_US
dc.authoridTR39698en_US
dc.institutionauthorCantaş, Ayten-
dc.institutionauthorÖzyüzer, Gülnur Aygün-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume116en_US
dc.identifier.issue8en_US
dc.identifier.wosWOS:000342821600026en_US
dc.identifier.scopus2-s2.0-84906878005en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1063/1.4893708-
dc.relation.doi10.1063/1.4893708en_US
dc.coverage.doi10.1063/1.4893708en_US
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ1-
item.grantfulltextopen-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.openairetypeArticle-
item.languageiso639-1en-
item.fulltextWith Fulltext-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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