Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/5834
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dc.contributor.authorKeçik, Deniz-
dc.contributor.authorBacaksız, Cihan-
dc.contributor.authorSenger, Ramazan Tuğrul-
dc.contributor.authorDurgun, Engin-
dc.date.accessioned2017-07-03T08:45:31Z-
dc.date.available2017-07-03T08:45:31Z-
dc.date.issued2015-10-
dc.identifier.citationKeçik, D., Bacaksız, C., Senger, R.T., and Durgun, E. (2015). Layer- and strain-dependent optoelectronic properties of hexagonal AlN. Physical Review B - Condensed Matter and Materials Physics, 92(16). doi:10.1103/PhysRevB.92.165408en_US
dc.identifier.issn1098-0121-
dc.identifier.issn1550-235X-
dc.identifier.urihttps://doi.org/10.1103/PhysRevB.92.165408-
dc.identifier.urihttp://hdl.handle.net/11147/5834-
dc.description.abstractMotivated by the recent synthesis of layered hexagonal aluminum nitride (h-AlN), we investigate its layer- and strain-dependent electronic and optical properties by using first-principles methods. Monolayer h-AlN is a wide-gap semiconductor, which makes it interesting especially for usage in optoelectronic applications. The optical spectra of 1-, 2-, 3-, and 4-layered h-AlN indicate that the prominent absorption takes place outside the visible-light regime. Within the ultraviolet range, absorption intensities increase with the number of layers, approaching the bulk case. On the other hand, the applied tensile strain gradually redshifts the optical spectra. The many-body effects lead to a blueshift of the optical spectra, while exciton binding is also observed for 2D h-AlN. The possibility of tuning the optoelectronic properties via thickness and/or strain opens doors to novel technological applications of this promising material.en_US
dc.description.sponsorshipTUBITAK (113T050/114F397); Flemish Science Foundation (FWO-Vl); The Science Academy, Turkeyen_US
dc.language.isoenen_US
dc.publisherAmerican Physical Societyen_US
dc.relationinfo:eu-repo/grantAgreement/TUBITAK/MFAG/114F397en_US
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGrapheneen_US
dc.subjectOptoelectronic propertiesen_US
dc.subjectHexagonal aluminum nitrideen_US
dc.subjectOptoelectronic devicesen_US
dc.titleLayer- and strain-dependent optoelectronic properties of hexagonal AlNen_US
dc.typeArticleen_US
dc.authoridTR2199en_US
dc.institutionauthorBacaksız, Cihan-
dc.institutionauthorSenger, Ramazan Tuğrul-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume92en_US
dc.identifier.issue16en_US
dc.identifier.wosWOS:000362493600008en_US
dc.identifier.scopus2-s2.0-84944755338en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1103/PhysRevB.92.165408-
dc.relation.doi10.1103/PhysRevB.92.165408en_US
dc.coverage.doi10.1103/PhysRevB.92.165408en_US
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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