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https://hdl.handle.net/11147/5888
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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bilgilisoy, Elif | - |
dc.contributor.author | Özden, Selin | - |
dc.contributor.author | Bakali, Emine | - |
dc.contributor.author | Karakaya, Merve | - |
dc.contributor.author | Selamet, Yusuf | - |
dc.date.accessioned | 2017-07-07T11:27:00Z | - |
dc.date.available | 2017-07-07T11:27:00Z | - |
dc.date.issued | 2015-09-26 | - |
dc.identifier.citation | Bilgilisoy, E., Özden, S., Bakali, E., Karakaya, M., and Selamet, Y. (2015). Characterization of CdTe growth on GaAs using different etching techniques. Journal of Electronic Materials, 44(9), 3124-3133. doi:10.1007/s11664-015-3830-5 | en_US |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://doi.org/10.1007/s11664-015-3830-5 | - |
dc.identifier.uri | http://hdl.handle.net/11147/5888 | - |
dc.description.abstract | CdTe buffer layers which were grown on (211)B GaAs by molecular beam epitaxy were subjected to two different etch treatments to quantify the crystal quality and dislocation density. The optical properties and thicknesses of the samples were obtained by ex situ spectroscopic ellipsometry. The surface morphologies of the CdTe epilayers were analyzed by atomic force microscopy, scanning electron microscopy, and Nomarski microscopy before and after chemical etching. We compare the triangle- and trapezoid-shaped etch pits due to the Everson and Nakagawa etch solutions, respectively. Measured etch pit density (EPD) values of triangle etch pits were found in the 8 × 107 cm−2 to 2 × 108 cm−2 range, and trapezoid-shaped etch pits were found in the 1 × 107 cm−2 to 7 × 107 cm−2 range for samples with thicknesses <2 μm. | en_US |
dc.description.sponsorship | Gediz Project at Izmir Institute of Technology | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer Verlag | en_US |
dc.relation.ispartof | Journal of Electronic Materials | en_US |
dc.rights | info:eu-repo/semantics/openAccess | en_US |
dc.subject | Defect decoration etching | en_US |
dc.subject | Cadmium telluride | en_US |
dc.subject | Etch pit density | en_US |
dc.subject | Molecular beam epitaxy | en_US |
dc.subject | Raman mapping | en_US |
dc.title | Characterization of Cdte Growth on Gaas Using Different Etching Techniques | en_US |
dc.type | Article | en_US |
dc.authorid | TR246463 | en_US |
dc.institutionauthor | Bilgilisoy, Elif | - |
dc.institutionauthor | Özden, Selin | - |
dc.institutionauthor | Bakali, Emine | - |
dc.institutionauthor | Karakaya, Merve | - |
dc.institutionauthor | Selamet, Yusuf | - |
dc.department | İzmir Institute of Technology. Physics | en_US |
dc.identifier.volume | 44 | en_US |
dc.identifier.issue | 9 | en_US |
dc.identifier.startpage | 3124 | en_US |
dc.identifier.endpage | 3133 | en_US |
dc.identifier.wos | WOS:000360311300025 | en_US |
dc.identifier.scopus | 2-s2.0-84940437497 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |
dc.identifier.doi | 10.1007/s11664-015-3830-5 | - |
dc.relation.doi | 10.1007/s11664-015-3830-5 | en_US |
dc.coverage.doi | 10.1007/s11664-015-3830-5 | en_US |
dc.identifier.wosquality | Q3 | - |
dc.identifier.scopusquality | Q2 | - |
item.fulltext | With Fulltext | - |
item.openairetype | Article | - |
item.openairecristype | http://purl.org/coar/resource_type/c_18cf | - |
item.languageiso639-1 | en | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
crisitem.author.dept | 01. Izmir Institute of Technology | - |
crisitem.author.dept | 01. Izmir Institute of Technology | - |
crisitem.author.dept | 01. Izmir Institute of Technology | - |
crisitem.author.dept | 04.05. Department of Pyhsics | - |
Appears in Collections: | Physics / Fizik Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection |
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