Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/6006
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dc.contributor.authorArı, Ozan-
dc.contributor.authorBilgilisoy, Elif-
dc.contributor.authorÖzçeri, Elif-
dc.contributor.authorSelamet, Yusuf-
dc.date.accessioned2017-07-25T06:35:17Z-
dc.date.available2017-07-25T06:35:17Z-
dc.date.issued2016-10-01-
dc.identifier.citationArı, O., Bilgilisoy, E., Özçeri, E., and Selamet, Y. (2016). MBE-grown CdTe layers on GaAs with in-assisted thermal deoxidation. Journal of Electronic Materials, 45(10), 4736-4741. doi:10.1007/s11664-016-4418-4en_US
dc.identifier.issn0361-5235-
dc.identifier.urihttps://doi.org/10.1007/s11664-016-4418-4-
dc.identifier.urihttp://hdl.handle.net/11147/6006-
dc.description.abstractMolecular beam epitaxy (MBE) growth of thin (∼2 μm) CdTe layers characterized by high crystal quality and low defect density on lattice mismatched substrates, such as GaAs and Si, has thus far been difficult to achieve. In this work, we report the effects of in situ thermal deoxidation under In and As4 overpressure prior to the CdTe growth on epiready GaAs(211)B wafers, aiming to enhance CdTe crystal quality. Thermally deoxidized GaAs samples were analyzed using in situ reflection high energy electron diffraction, along with ex situ x-ray photo-electron spectroscopy (XPS) and atomic force microscopy. MBE-grown CdTe layers were characterized using x-ray diffraction (XRD) and Everson-type wet chemical defect decoration etching. We found that In-assisted desorption allowed for easier surface preparation and resulted in a smoother surface compared to As-assisted surface preparation. By applying In-assisted thermal deoxidation to GaAs substrates prior to the CdTe growth, we have obtained single crystal CdTe films with a CdTe(422) XRD rocking curve with a full-width half-maximum value of 130.8 arc-s and etch pit density of 4 × 106 cm−2 for 2.54 μm thickness. We confirmed, by XPS analysis, no In contamination on the thermally deoxidized surface.en_US
dc.language.isoenen_US
dc.publisherSpringer Verlagen_US
dc.relation.ispartofJournal of Electronic Materialsen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectCdTe growthen_US
dc.subjectGaAs deoxidationen_US
dc.subjectMBEen_US
dc.subjectX-ray diffractionen_US
dc.subjectCadmium tellurideen_US
dc.subjectGallium arsenideen_US
dc.titleMBE-grown CdTe layers on GaAs with in-assisted thermal deoxidationen_US
dc.typeArticleen_US
dc.authoridTR200803en_US
dc.authoridTR160243en_US
dc.institutionauthorArı, Ozan-
dc.institutionauthorBilgilisoy, Elif-
dc.institutionauthorÖzçeri, Elif-
dc.institutionauthorSelamet, Yusuf-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume45en_US
dc.identifier.issue10en_US
dc.identifier.startpage4736en_US
dc.identifier.endpage4741en_US
dc.identifier.wosWOS:000382585400004en_US
dc.identifier.scopus2-s2.0-84960157090en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/s11664-016-4418-4-
dc.relation.doi10.1007/s11664-016-4418-4en_US
dc.coverage.doi10.1007/s11664-016-4418-4en_US
dc.identifier.scopusqualityQ2-
item.fulltextWith Fulltext-
item.openairetypeArticle-
item.cerifentitytypePublications-
item.languageiso639-1en-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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