Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/6456
Title: Comparative study of annealing and gold dopant effect on DC sputtered vanadium oxide films for bolometer applications
Authors: Alaboz, Hakan
Demirhan, Yasemin
Yüce, Hürriyet
Aygün, Gülnur
Özyüzer, Lütfi
Keywords: Gold doping
Magnetron sputtering
Post annealing
Vanadium oxide
Oxide films
Publisher: Springer Verlag
Source: Alaboz, H., Demirhan, Y., Yüce, H., Aygün, G., and Özyüzer, L. (2017). Comparative study of annealing and gold dopant effect on DC sputtered vanadium oxide films for bolometer applications. Optical and Quantum Electronics, 49(7). doi:10.1007/s11082-017-1072-x
Abstract: Vanadium oxide (VOx) thin film has been widely used for IR detectors and it is one of the promising materials for THz detectors due to its high temperature coefficient of resistance (TCR) values. VOx films with proper TCR values have also high resistance and it restricts bolometer performance especially for uncooled bolometers. To overcome this problem, deposition at elevated temperatures or annealing approach has been accepted and used but gold co-deposition approach has been proposed recently. In this study, vanadium oxide films were fabricated on high resistivity silicon substrates by reactive direct current magnetron sputtering in different O2/Ar atmosphere at room temperature. We investigated influence of oxygen partial pressure during deposition process and fabricated VOx thin films with sufficient TCR values for bolometer applications. In order to decrease resistivity of the deposited films, post annealing and gold doping approaches were performed separately. Effect of both post annealing process and gold doping process on structural and electrical properties of VOx thin films deposited at room temperature were investigated and detailed comparison between these methods were presented. We obtained the best possible approach to obtain optimum conditions for the highly reproducible VOx thin films which have the best resistivity and suitable TCR value for bolometer applications.
URI: http://doi.org/10.1007/s11082-017-1072-x
http://hdl.handle.net/11147/6456
ISSN: 0306-8919
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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