Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/6457
Title: Electron field emission from SiC nanopillars produced by using nanosphere lithography
Authors: Yeşilpınar, Damla
Çelebi, Cem
Keywords: Electric fields
Aspect ratio
Nanostructures
Silicon carbide
Electron emission
Issue Date: Jul-2017
Publisher: AVS Science and Technology Society
Source: Yeşilpınar, D., and Çelebi, C. (2017). Electron field emission from SiC nanopillars produced by using nanosphere lithography. American Vacuum Society, 35(4). doi:10.1116/1.4989853
Abstract: Field emitter arrays of silicon carbide based nanopillars with high emitter density were fabricated by using a combination of nanosphere lithography and inductively coupled plasma reactive ion etching techniques. The electron field emission characteristics of the produced nanopillars with two different aspect ratios and geometries were investigated, and the obtained results were compared with each other. The authors found that unlike the samples containing low aspect ratio SiC nanopillars with blunt tip apex, the samples comprising high aspect ratio nanopillars with sharp tip apex generate greater emission currents under lower electric fields. The nanopillars with sharp tip apex produced field emission currents up to 240 μA/cm2 under 17.4 V/μm applied electric field, while the nanopillars with blunt tip apex produced an emission current of 70 μA/cm2. The electric fields required to obtain 10 μA/cm2 current density are found to be 9.1 and 7.2 V/μm for the nanopillars with blunt and sharp tip apex, respectively. Time dependent stability measurements yielded stable electron emission without any abrupt change in the respective current levels of both samples.
URI: http://doi.org/10.1116/1.4989853
http://hdl.handle.net/11147/6457
ISSN: 2166-2746
2166-2754
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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