Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7528
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dc.contributor.authorAydın, Hasan-
dc.contributor.authorBacaksız, Cihan-
dc.contributor.authorYağmurcukardeş, Nesli-
dc.contributor.authorKarakaya, Caner-
dc.contributor.authorMermer, Ömer-
dc.contributor.authorCan, Mustafa-
dc.contributor.authorŞenger, Ramazan Tuğrul-
dc.contributor.authorŞahin, Hasan-
dc.contributor.authorSelamet, Yusuf-
dc.date.accessioned2019-12-25T13:47:00Z
dc.date.available2019-12-25T13:47:00Z
dc.date.issued2018-01en_US
dc.identifier.citationAydın, H., Bacaksız, C., Yağmurcukardeş, N., Karakaya, C., Mermer, Ö., Can, M., Senger, R. T., Şahin, H., and Selamet, Y. (2018). Experimental and computational investigation of graphene/SAMs/n-Si Schottky diodes. Applied Surface Science, 428, 1010-1017. doi:10.1016/j.apsusc.2017.09.204en_US
dc.identifier.issn0169-4332
dc.identifier.issn0169-4332-
dc.identifier.issn1873-5584-
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2017.09.204
dc.identifier.urihttps://hdl.handle.net/11147/7528
dc.description.abstractWe have investigated the effect of two different self-assembled monolayers (SAMs) on electrical characteristics of bilayer graphene (BLG)/n-Si Schottky diodes. Novel 4″bis(diphenylamino)-1, 1′:3″-terphenyl-5′ carboxylic acids (TPA) and 4,4-di-9H-carbazol-9-yl-1,1′:3′1′-terphenyl-5′ carboxylic acid (CAR) aromatic SAMs have been used to modify n-Si surfaces. Cyclic voltammetry (CV) and Kelvin probe force microscopy (KPFM) results have been evaluated to verify the modification of n-Si surface. The current–voltage (I–V) characteristics of bare and SAMs modified devices show rectification behaviour verifying a Schottky junction at the interface. The ideality factors (n) from ln(I)–V dependences were determined as 2.13, 1.96 and 2.07 for BLG/n-Si, BLG/TPA/n-Si and BLG/CAR/n-Si Schottky diodes, respectively. In addition, Schottky barrier height (SBH) and series resistance (R s ) of SAMs modified diodes were decreased compared to bare diode due to the formation of a compatible interface between graphene and Si as well as π–π interaction between aromatic SAMs and graphene. The CAR-based device exhibits better diode characteristic compared to the TPA-based device. Computational simulations show that the BLG/CAR system exhibits smaller energy-level-differences than the BLG/TPA, which supports the experimental findings of a lower Schottky barrier and series resistance in BLG/CAR diode.en_US
dc.description.sponsorshipThe Scientific and Technical Research Council of Turkey (112T946)en_US
dc.language.isoenen_US
dc.publisherElsevier Ltd.en_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectGrapheneen_US
dc.subjectSchottky diodeen_US
dc.subjectSelf assembled monolayersen_US
dc.subjectAromatic compoundsen_US
dc.subjectSilicon compoundsen_US
dc.titleExperimental and computational investigation of graphene/SAMs/n-Si Schottky diodesen_US
dc.typeArticleen_US
dc.authorid0000-0003-0800-1924en_US
dc.authorid0000-0002-6189-6707en_US
dc.institutionauthorAydın, Hasan-
dc.institutionauthorBacaksız, Cihan-
dc.institutionauthorYağmurcukardeş, Nesli-
dc.institutionauthorŞenger, Ramazan Tuğrul-
dc.institutionauthorŞahin, Hasan-
dc.institutionauthorSelamet, Yusuf-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.departmentIzmir Institute of Technology. Materials Science and Engineeringen_US
dc.departmentIzmir Institute of Technology. Photonicsen_US
dc.identifier.volume428en_US
dc.identifier.startpage1010en_US
dc.identifier.endpage1017en_US
dc.identifier.wosWOS:000415227000128en_US
dc.identifier.scopus2-s2.0-85030672860en_US
dc.relation.tubitakinfo:eu-repo/grantAgreement/TUBITAK/TBAG/112T946
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.apsusc.2017.09.204-
dc.relation.doi10.1016/j.apsusc.2017.09.204en_US
dc.coverage.doi10.1016/j.apsusc.2017.09.204en_US
dc.identifier.scopusqualityQ1-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeArticle-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
item.grantfulltextopen-
item.languageiso639-1en-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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