Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7562
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dc.contributor.authorMedjaldi, M.-
dc.contributor.authorTouil, O.-
dc.contributor.authorBoudine, B.-
dc.contributor.authorZaabat, M.-
dc.contributor.authorHalimi, O.-
dc.contributor.authorSebais, M.-
dc.contributor.authorÖzyüzer, Lütfi-
dc.date.accessioned2020-01-06T13:55:13Z
dc.date.available2020-01-06T13:55:13Z
dc.date.issued2018-11en_US
dc.identifier.citationMedjaldi, M., Touil, O., Boudine, B., Zaabat, M., Halimi, O., Sebais, M., and Özyüzer, L. (2018). Study of undoped and indium doped ZnO thin films deposited by sol gel method. Silicon, 10(6), 2577-2584. doi:10.1007/s12633-018-9793-4en_US
dc.identifier.issn1876-990X
dc.identifier.issn1876-990X-
dc.identifier.issn1876-9918-
dc.identifier.urihttps://doi.org/10.1007/s12633-018-9793-4
dc.identifier.urihttps://hdl.handle.net/11147/7562
dc.description.abstractIn this paper, we report the effects of Indium doping concentrations (from 0 to 10wt%) on the structural, morphological, and optical properties of deposited In doped ZnO (IZO) thin films prepared by the sol–gel method through the dip coating technique. X-ray diffraction (XRD) analysis indicates that all ZnO thin films have a polycrystalline nature with a hexagonal wurtzite phase with (002) as a preferential orientation. XRD results demonstrate that the particle size of ZnO decreased with the increase in Indium concentrations. Raman scattering spectra confirmed the wurtzite phase and the presence of intrinsic defects in our samples. Energy dispersive spectroscopy (EDS) and the X-ray photoelectron spectroscopy (XPS) measurements, confirmed the presence of zinc, oxygen and indium elements which is in agreement with XPS results. The photoluminescence (PL) spectra of the films exhibit defects-related visible emission peaks, with intensities differing owing to different concentrations of zinc vacancies. UV–Vis spectrometer measurements show that all the films are highly transparent in the visible wavelength region (≥ 70%) and presented two different absorption edges at about 3.21 eV and 3.7 eV, these may be correspond to the band gap of zinc oxide and indium oxide respectively.en_US
dc.language.isoenen_US
dc.publisherSpringer Verlagen_US
dc.relation.ispartofSiliconen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectThin filmsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectTransmittanceen_US
dc.subjectPhononsen_US
dc.subjectOxide filmsen_US
dc.subjectSol-Gelen_US
dc.titleStudy of undoped and indium doped ZnO thin films deposited by sol gel methoden_US
dc.typeArticleen_US
dc.authorid0000-0001-7630-3938en_US
dc.institutionauthorÖzyüzer, Lütfi-
dc.departmentIzmir Institute of Technology. Physicsen_US
dc.identifier.volume10en_US
dc.identifier.issue6en_US
dc.identifier.startpage2577en_US
dc.identifier.endpage2584en_US
dc.identifier.wosWOS:000451189700021en_US
dc.identifier.scopus2-s2.0-85045263613en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1007/s12633-018-9793-4-
dc.relation.doi10.1007/s12633-018-9793-4en_US
dc.coverage.doi10.1007/s12633-018-9793-4en_US
dc.identifier.scopusqualityQ3-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeArticle-
item.fulltextWith Fulltext-
item.cerifentitytypePublications-
item.grantfulltextopen-
item.languageiso639-1en-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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