Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/7631
Title: Epitaxial graphene thermistor for cryogenic temperatures
Authors: Kalkan, Sırrı Batuhan
Yiğen, Seren
Çelebi, Cem
Keywords: Encapsulation
Epitaxial graphene
NTC thermistor
Low temperatures
Publisher: Elsevier
Source: Kalkan, S. B., Yiğen, S., and Çelebi, C. (2018). Epitaxial graphene thermistor for cryogenic temperatures. Sensors and Actuators, A: Physical, 280, 8-13. doi:10.1016/j.sna.2018.07.028
Abstract: The thermal responsivity of monolayer epitaxial graphene grown on the Si-face surface of semi-insulating SiC substrate is investigated as a function of temperature below 300 K. The measurements showed that adsorption/desorption of atmospheric adsorbates can randomly modify the electrical characteristics of graphene which is indeed undesirable for consistent temperature sensing operations. Therefore, in order to avoid the interaction between graphene layer and adsorbates, the grown graphene layer is encapsulated with a thin SiO2 film deposited by Pulsed Electron Deposition technique. Temperature dependent resistance measurement of encapsulated graphene exhibited a clear thermistor type behavior with negative temperature coefficient resistance character. Both the sensitivity and transient thermal responsivity of the SiO2/graphene/SiC sample were found to be enhanced greatly especially for the temperatures lower than 225 K. The experimentally obtained results suggest that SiO2 encapsulated epitaxial graphene on SiC can be used readily as an energy efficient and stable temperature sensing element in cryogenic applications.
URI: https://doi.org/10.1016/j.sna.2018.07.028
https://hdl.handle.net/11147/7631
ISSN: 0924-4247
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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