Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/8845
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dc.contributor.authorBaşkurt, Mehmet-
dc.contributor.authorEren, İsmail-
dc.contributor.authorYağmurcukardeş, Mehmet-
dc.contributor.authorŞahin, Hasan-
dc.date.accessioned2020-07-18T08:34:03Z-
dc.date.available2020-07-18T08:34:03Z-
dc.date.issued2020-
dc.identifier.issn0169-4332-
dc.identifier.issn1873-5584-
dc.identifier.urihttps://doi.org/10.1016/j.apsusc.2019.144937-
dc.identifier.urihttps://hdl.handle.net/11147/8845-
dc.description.abstractMotivated by the recent synthesis of two-dimensional VI3 [Kong et al. Adv. Mater. 31, 1808074 (2019)], we investigate the effect of V doping on the magnetic and electronic properties of monolayer VI3 by means of first-principles calculations. The dynamically stable semiconducting ferromagnetic (FM) and antiferromagnetic (AFM) phases of monolayer VI3 are found to display distinctive vibrational features that the magnetic state can be distinguished by Raman spectroscopy. In order to clarify the effect of experimentally observed excessive V atoms, the magnetic and electronic properties of the V-doped VI3 structures are analyzed. Our findings indicate that partially doped VI3 structures display FM ground state while the fully-doped structure exhibits AFM ground state. The fully-doped monolayer VI3 is found to be a semiconductor with a relatively larger band gap than its pristine structure. In addition, strain-dependent electronic and magnetic properties of fully- and partially-doped VI3 structures reveal that pristine monolayer displays a FM-to-AFM phase transition with robust semiconducting nature for 5% of compressive strain, while fully-doped monolayer VI3 structure possesses AFM-to-FM semiconducting transition at tensile strains larger than 4%. In contrast, the partially-doped VI3 monolayers are found to display robust FM ground state under biaxial strain. Its dopant and strain tunable electronic and magnetic nature makes monolayer VI3 a promising material for applications in nanoscale spintronic devices.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleVanadium dopant- and strain-dependent magnetic properties of single-layer VI3en_US
dc.typeArticleen_US
dc.institutionauthorBaşkurt, Mehmet-
dc.institutionauthorŞahin, Hasan-
dc.institutionauthorEren, İsmail-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.departmentİzmir Institute of Technology. Photonicsen_US
dc.identifier.volume508en_US
dc.identifier.wosWOS:000516818700040en_US
dc.identifier.scopus2-s2.0-85077510478en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1016/j.apsusc.2019.144937-
dc.relation.doi10.1016/j.apsusc.2019.144937en_US
dc.coverage.doi10.1016/j.apsusc.2019.144937en_US
local.message.claim2022-06-09T15:20:09.758+0300|||rp00609|||submit_approve|||dc_contributor_author|||None*
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
dc.identifier.wosqualityttpTop10%en_US
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
item.grantfulltextopen-
crisitem.author.dept04.05. Department of Pyhsics-
crisitem.author.dept04.04. Department of Photonics-
crisitem.author.dept04.04. Department of Photonics-
Appears in Collections:Photonics / Fotonik
Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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