Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/8879
Full metadata record
DC FieldValueLanguage
dc.contributor.authorMcClintock, Luke-
dc.contributor.authorXiao, Rui-
dc.contributor.authorHou, Yasen-
dc.contributor.authorGibson, Clinton-
dc.contributor.authorTravaglini, Henry Clark-
dc.contributor.authorAbramovitch, David-
dc.contributor.authorTan, Liang Z.-
dc.contributor.authorSenger, Ramazan Tuğrul-
dc.contributor.authorFu, Yongping-
dc.contributor.authorJin, Song-
dc.date.accessioned2020-07-18T08:34:05Z-
dc.date.available2020-07-18T08:34:05Z-
dc.date.issued2020-
dc.identifier.issn1948-7185-
dc.identifier.urihttps://doi.org/10.1021/acs.jpclett.9b03643-
dc.identifier.urihttps://hdl.handle.net/11147/8879-
dc.description.abstractWe investigate temperature-dependent photogenerated carrier diffusion in single-crystal methylammonium lead iodide microstuctures via scanning photocurrent microscopy, Carrier diffusion lengths increased abruptly across the tetragonal to orthorhombic phase transition and reached 200 +/- 50 mu m at 80 K. In combination with the microsecond carrier lifetime measured by a transient photocurrent method, an enormous carrier mobility value of 3 x 10(4) cm(2)/V s was extracted at 80 K. The observed highly nonlocal photocurrent and the rapid increase of the carrier diffusion length at low temperatures can be understood by the formation and efficient transport of free excitons in the orthorhombic phase as a result of reduced optical phonon scattering due to the dipolar nature of the excitons. Carrier diffusion lengths were tuned by a factor of 8 by gate voltage and increased with increasing majority carrier (electron) concentration, consistent with the exciton model.en_US
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.relation.ispartofJournal of Physical Chemistry Lettersen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleTemperature and gate dependence of carrier diffusion in single crystal methylammonium lead Iodide perovskite microstructuresen_US
dc.typeArticleen_US
dc.institutionauthorSenger, Ramazan Tuğrul-
dc.departmentİzmir Institute of Technology. Physicsen_US
dc.identifier.volume11en_US
dc.identifier.issue3en_US
dc.identifier.startpage1000en_US
dc.identifier.endpage1006en_US
dc.identifier.wosWOS:000512223400061en_US
dc.identifier.scopus2-s2.0-85079075341en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1021/acs.jpclett.9b03643-
dc.identifier.pmid31958953en_US
dc.relation.doi10.1021/acs.jpclett.9b03643en_US
dc.coverage.doi10.1021/acs.jpclett.9b03643en_US
dc.identifier.wosqualityQ1-
dc.identifier.scopusqualityQ1-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.cerifentitytypePublications-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.grantfulltextopen-
item.openairetypeArticle-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Physics / Fizik
PubMed İndeksli Yayınlar Koleksiyonu / PubMed Indexed Publications Collection
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
Files in This Item:
File SizeFormat 
acs.jpclett.9b03643.pdf4.88 MBAdobe PDFView/Open
Show simple item record



CORE Recommender

SCOPUSTM   
Citations

12
checked on Apr 5, 2024

WEB OF SCIENCETM
Citations

12
checked on Mar 16, 2024

Page view(s)

92
checked on Apr 15, 2024

Download(s)

104
checked on Apr 15, 2024

Google ScholarTM

Check




Altmetric


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.