Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/9353
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dc.contributor.authorHavare, A. Kemal-
dc.contributor.authorCan, Mustafa-
dc.contributor.authorYağmurcukardeş, Nesli-
dc.contributor.authorYiğit, Mesude Zeliha-
dc.contributor.authorAydın, Hasan-
dc.contributor.authorOkur, Salih-
dc.contributor.authorDemiç, Şerafettin-
dc.contributor.authorİçli, Sıddıktr
dc.date.accessioned2020-07-25T22:10:40Z-
dc.date.available2020-07-25T22:10:40Z-
dc.date.issued2016-
dc.identifier.issn2162-8769-
dc.identifier.urihttps://doi.org/10.1149/2.0131605jss-
dc.identifier.urihttps://hdl.handle.net/11147/9353-
dc.description.abstract4-[(3-Methylphenyl)(phenyl)amino]benzoic acid (MPPBA) self-assembled monolayer (SAM) molecules as hole injection is formed on p and n type Si and on indium-tin oxide (ITO) electrodes to investigate the effect on the electrical parameters of hole only organic device. The hole mobility improvement of organic device was attributed to an intermediate energy level formed between hole transport materials (HTL) (N,N'-Bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine -NPB) and ITO when forming an ultrathin MPPBA layer, leading to increase of carrier mobility of the device. Space charge limited current (SCLC) technique is used to estimate the mobility of the NPB formed at the interface metal/organic Ohmic contact. The hole mobility of ITO/NPB/Al and ITO/MPPBA/NPB/Al devices were obtained as 1.80 x 10(-6) and 1.76 x 10(-3) cm(2)/Vs, at 1350 E (V/cm)(1/2) applied electric field, respectively. SAM modified devices has lower barrier height values. The electronic characteristic parameters of the ITO/(with or without MPPBA)/NPB/Al, Au/n-Si(or p-Si)/(with or without MPPBA)/Au contacts were calculated using current-voltage (I-V) measurements by Schottky type carrier injection. (C) The Author(s) 2016. Published by ECS.en_US
dc.language.isoenen_US
dc.publisherElectrochemical Society, Inc.en_US
dc.relation.ispartofECS Journal of Solid State Science and Technologyen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleInvestigation of the electrical parameters of the organic diode modified with 4-[(3-Methylphenyl)(phenyl)amino] benzoic aciden_US
dc.typeArticleen_US
dc.institutionauthorYağmurcukardeş, Nesli-
dc.institutionauthorAydın, Hasantr
dc.departmentİzmir Institute of Technology. Materials Science and Engineeringen_US
dc.identifier.volume5en_US
dc.identifier.issue5en_US
dc.identifier.startpageP239en_US
dc.identifier.endpageP244en_US
dc.identifier.wosWOS:000375265700004en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.identifier.doi10.1149/2.0131605jss-
dc.relation.doi10.1149/2.0131605jssen_US
dc.coverage.doi10.1149/2.0131605jssen_US
dc.identifier.wosqualityQ2-
dc.identifier.scopusqualityQ1-
item.openairetypeArticle-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.grantfulltextopen-
item.fulltextWith Fulltext-
item.languageiso639-1en-
item.cerifentitytypePublications-
crisitem.author.dept04.05. Department of Pyhsics-
Appears in Collections:Materials Science and Engineering / Malzeme Bilimi ve Mühendisliği
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection
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