Noise in hydrogenated amorphous silicon

Abstract

Published work on conductance fluctuations in hydrogenated amorphous silicon is surveyed. There are many reports of 1/f noise. some describing unusual features Such as non-Gaussian statistics. The relative insensitivity to doping and temperature is highlighted. In addition to the 1/f noise. random-telegraph-like noise is often reported. The successes and failures of generation-recombination models for 1 f noise and current filament models for the telegraph noise are summarised.