Özyüzer, LütfiMiyakawa, NobuakiZasadzinski, John F.Yusof, Zikri M.Romano, PieromKendziora, Christopher A.Hinks, David G.Gray, Kenneth E.2016-04-182016-04-181999Özyüzer, L., Miyakawa, N., Zasadzinski, J. F., Yusof, Z. M., Romano, P., Kendziora, C. A., Hinks, D. G., and Gray, K. E. (1999). Simultaneous quasiparticle and josephson tunneling in BSCCO-2212 break junctions. IEEE Transactions on Applied Superconductivity, 9(2), 2898-2901. doi:10.1109/77.7836351051-82231051-8223http://doi.org/10.1109/77.783635http://hdl.handle.net/11147/4514Tunneling measurements are reported for superconductor-insulator-superconductor (SIS) break junctions on underdoped, optimally-doped, and overdoped single crystals of tSrsCaCiOs-).,! (Bi2212). The junction I -V characteristics exhibit welldefined quasiparticle current jumps at eV = 2A as well as hysteretic Josephson currents. The quasiparticle branch has been analyzed in the framework of dxa_y2 (d-wave) superconductivity and indicates that there is preferential tunneling along the lobe directions of the d-wave gap. For overdoped Bi-2212 with TC-62 K, the Josephson current is measured as a function of junction resistance, Rn, which varied by two orders of magnitude (1 kO to 100 kO). IcRn product is proportional to the 0.47 power of /c and displays a maximum of 7.0 mV. When the hole doping is decreased from overdoped (Tc=62 K) to the underdoped regime (Tc=70 K), the average IcRn product increases as does the quasiparticle gap. The maximum IcRn is ~ 40% of the A/e at each doping level, with a value as high as 25 mV in underdoped Bi-2212.eninfo:eu-repo/semantics/openAccessSuperconducting materialsBismuth compoundsCurrent voltage characteristicsElectric currentsJosephson junction devicesArticle2-s2.0-003268279410.1109/77.78363510.1109/77.783635