Kaplan, NazmiyeTaşcı, EnisEmrullahoğlu, MustafaGökçe, HalilTuğluoğlu, NihatEymur, Serkan2021-11-062021-11-0620210957-45221573-482Xhttps://doi.org/10.1007/s10854-021-06231-8https://hdl.handle.net/11147/11480The alpha-styryl substituted BODIPY compound (BDP-Sty) was synthesized and characterized. The optimize ground state structure, HOMO and LUMO simulations, MEP surface map, and various molecular descriptors of the isolated BDP-Sty compound were investigated by Density Functional Theory at the B3LYP/6-311G (d,p) level. The reverse and forward bias current-voltage (I-V) characteristics of the Au/BDP-Sty/n-Si/In diode showed Schottky diode-like characteristics. An ideality factor (n) and barrier height (phi(b)) values of prepared diode for dark were found as 2.32 and 0.828, respectively. The series resistance (R-s) values were attained from the dV/dln(I) plot and Cheung's H(I) function and their values found for dark as 4.95 k omega and 4.59 k omega, respectively. The lnI - lnV and ln(I-R) - V-R(1/2) characteristics of the Au/BDP-Sty/n-Si/In diode reveal that the conduction mechanism is ohmic at low voltage and that of trap-filled space charge limited current and space charge limited current at higher voltage. The characteristic photodiode parameters of the prepared diode such as open circuit voltage (V-oc), short circuit current density (J(sc)), and photosensitivity (S) have also been investigated. All these results indicate the applicability for Au/BDP-Sty/n-Si/In diode in the field optoelectronic device applications.eninfo:eu-repo/semantics/closedAccessDiodesHeterojunctionsArticle2-s2.0-8510672744810.1007/s10854-021-06231-8