Johanson, Robert E.Güneş, MehmetKasap, Safa O.04.05. Department of Pyhsics04. Faculty of Science01. Izmir Institute of Technology2016-04-222016-04-222000-05Johanson, R. E., Güneş, M., and Kasap, S. O. (2000). 1/f Noise in doped and undoped amorphous silicon. Journal of Non-Crystalline Solids, 266-269(PART 1), 242-246. doi:10.1016/S0022-3093(99)00832-70022-30930022-3093http://doi.org/10.1016/S0022-3093(99)00832-7http://hdl.handle.net/11147/4537We measured the spectrum of conductance fluctuations in n-type, p-type, and undoped hydrogenated amorphous silicon (a-Si:H) as a function of temperature. In general, the spectra can be fit to a power law, 1/fα, although in the p-type and undoped samples deviations from a strict power law occur. For n-type and p-type samples, the noise magnitude increases with temperature by approximately a factor of 5 from 295 to 450 K. The slope parameter, α, also increases with temperature in the p-type samples from near unity to 1.4 but not in the n-type sample where it remains near 1.05 independent of temperature. The undoped sample could be measured only over a limited range of elevated temperatures, but α does trend larger. The undoped and lightly doped material have similar noise levels but larger p-type doping reduces the noise by two orders of magnitude. Correlation measurements indicate the 1/f noise is Gaussian for all samples. However, intermittent random-telegraph noise is observed in n-type material.eninfo:eu-repo/semantics/openAccessSiliconRandom-telegraph noiseElectronic noiseArticle2-s2.0-000070900110.1016/S0022-3093(99)00832-7