Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/10561
Title: Epitaxial graphene contact electrode for silicon carbide based ultraviolet photodetector
Authors: Kuşdemir, Erdi
Özkendir, Dilce
Fırat, Volkan
Çelebi, Cem
Keywords: epitaxial graphene
transparent electrode
4H-SiC
UV photodetector
Publisher: IOP Publishing Ltd.
Abstract: We present the fabrication and characterization of graphene-semiconductor-graphene ultraviolet photodetector based on the rectifying character of Schottky junction at the interface between epitaxial graphene and SiC semiconductor. As-grown single layer epitaxial graphene is interdigitated as transparent conductive electrode to probe photo-generated charge carriers in a semi-insulating 4H-SiC substrate. The fabricated device exhibits the typical current-voltage characteristics of a conventional metal-semiconductor-metal type photodetector with low leakage current. Time-resolved photocurrent measurements suggest an excellent photocurrent reversibility and high response speed of the device. The measurements performed for different illumination wavelengths showed that the sample reveals higher responsivity values when it is exposed to the light with 254 nm wavelength. The obtained results imply that epitaxial graphene can be used readily as transparent conductive electrode for SiC based optoelectronic device applications.
URI: https://doi.org/10.1088/0022-3727/48/9/095104
https://hdl.handle.net/10561
ISSN: 0022-3727
1361-6463
Appears in Collections:Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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