Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2028
Title: The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors
Authors: Özdağ, Pınar
Atanassova, Elena
Güneş, Mehmet
Keywords: Capacitance-voltage spectroscopy
Metal-oxide-semiconductor (MOS) capacitors
Tantalum pentoxide
Annealing
Publisher: National Institute of Optoelectronics
Source: Özdağ, P., Atanassova, E., and Güneş, M. (2005). The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors. Journal of Optoelectronics and Advanced Materials, 7(1), 293-296.
Abstract: High dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystalline silicon wafers using an RF magnetron sputtering technique. Then, metal-oxide-semiconductor (Al-Ta 2O 5-Si) structures were formed with various oxide thickness from 15 to 25 nm. Devices were characterized using the high frequency capacitance-voltage (C-V) spectroscopy method. From the analysis of the high frequency C-V curves, non-ideal effects such as oxide charges and interface trap densities have been evaluated. The results for Ta 2O 5 layers have been compared with those for conventional SiO 2 layers. Interface trap densities were found to be 1.6 ± 0.4×10 12 eV -1 cm -2 for Ta 2O 5 and about 2×10 11 eV -1 cm -2 for SiO 2 insulating layers. There was no clear thickness dependence of the interface trap densities for the Ta 2O 5 insulating layers.
URI: http://hdl.handle.net/11147/2028
ISSN: 1454-4164
1454-4164
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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