Please use this identifier to cite or link to this item:
Title: The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors
Authors: Özdağ, Pınar
Atanassova, Elena
Güneş, Mehmet
Keywords: Capacitance-voltage spectroscopy
Metal-oxide-semiconductor (MOS) capacitors
Tantalum pentoxide
Issue Date: Feb-2005
Publisher: National Institute of Optoelectronics
Source: Özdağ, P., Atanassova, E., and Güneş, M. (2005). The effects of oxide thickness on the interface and oxide properties of metal-tantalum pentoxide-Si (MOS) capacitors. Journal of Optoelectronics and Advanced Materials, 7(1), 293-296.
Abstract: High dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystalline silicon wafers using an RF magnetron sputtering technique. Then, metal-oxide-semiconductor (Al-Ta 2O 5-Si) structures were formed with various oxide thickness from 15 to 25 nm. Devices were characterized using the high frequency capacitance-voltage (C-V) spectroscopy method. From the analysis of the high frequency C-V curves, non-ideal effects such as oxide charges and interface trap densities have been evaluated. The results for Ta 2O 5 layers have been compared with those for conventional SiO 2 layers. Interface trap densities were found to be 1.6 ± 0.4×10 12 eV -1 cm -2 for Ta 2O 5 and about 2×10 11 eV -1 cm -2 for SiO 2 insulating layers. There was no clear thickness dependence of the interface trap densities for the Ta 2O 5 insulating layers.
ISSN: 1454-4164
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

Files in This Item:
File Description SizeFormat 
2028.pdfConference Paper109.35 kBAdobe PDFThumbnail
Show full item record

CORE Recommender


checked on Mar 25, 2023

Page view(s)

checked on Mar 27, 2023


checked on Mar 27, 2023

Google ScholarTM


Items in GCRIS Repository are protected by copyright, with all rights reserved, unless otherwise indicated.