Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2029
Title: Light induced degradation of hydrogenated amorphous silicon - Germanium alloy (a-SiGe:H) thin films
Authors: Dönertaş, M. Elif
Güneş, Mehmet
Keywords: Absorption coefficient
Hydrogenated silicon germanium alloys
Photoconductivity
Staebler-Wronski effect
Amorphous silicon
Issue Date: Feb-2005
Publisher: National Institute of Optoelectronics
Source: Dönertaş, M. E., and Güneş, M. (2005). Light induced degradation of hydrogenated amorphous silicon - Germanium alloy (a-SiGe:H) thin films. Journal of Optoelectronics and Advanced Materials, 7(1), 503-506.
Abstract: Hydrogenated amorphous silicon germanium alloy thin films prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) with varying Germanium concentrations have been investigated in both the annealed and the light soaked state. Samples were characterized using steady state photoconductivity and dual beam photoconductivity (DBP). The Staebler-Wronski effect has been investigated by monitoring the changes in the photoconductivity, σ ph, and the increase in the sub-bandgap absorption coefficient, α. The kinetics of defect creation for different germanium contents has also been compared with those for unalloyed hydrogenated amorphous silicon films. It is found that for the films with low Ge fraction, both a decrease in the photoconductivity and an increase in α (1.0eV) show similar time dependences to those observed in a-Si:H films. However, as the Ge content increases, σ ph degrades faster and the same time dependence is not seen in the increase of α(1.0eV).
URI: http://hdl.handle.net/11147/2029
ISSN: 1454-4164
1454-4164
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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