Please use this identifier to cite or link to this item: https://hdl.handle.net/11147/2031
Title: Properties of reactive O2 ion beam sputtered TiO2 on Si wafers
Authors: Ulucan, Savaş
Özyüzer, Gülnur Aygün
Özyüzer, Lütfi
Eğilmez, Mehmet
Turan, Raşit
Keywords: CMOS
Ion Beam Deposition
Silicon wafers
Optical chemical sensors
Issue Date: Feb-2005
Publisher: National Institute of Optoelectronics
Source: Ulucan, S., Aygün, G., Özyüzer, L., Eğilmez, M., and Turan, R. (2005). Properties of reactive O2 ion beam sputtered TiO2 on Si wafers. Journal of Optoelectronics and Advanced Materials, 7(1), 297-300.
Abstract: TiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of TiO2 were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400-4000 cm-1. An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited TiO2, the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of TiO2 are discussed.
URI: http://hdl.handle.net/11147/2031
ISSN: 1454-4164
1454-4164
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
Sürdürülebilir Yeşil Kampüs Koleksiyonu / Sustainable Green Campus Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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