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Title: Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques
Authors: Okur, Salih
Göktaş, Oktay
Güneş, Mehmet
Finger, Friedhelm
Carius, Reinhard
Keywords: Diffusion length
Microcrystalline silicon thin film
Raman spectroscopy
Steady state photocarrier grating technique
Issue Date: Feb-2005
Publisher: National Institute of Optoelectronics
Source: Okur, S., Göktaş, O., Güneş, M., Finger, F., and Carius, R. (2005). Minority carrier properties of microcrystalline silicon thin films grown by HW-CVD and VHF-PECVD techniques. Journal of Optoelectronics and Advanced Materials, 7(1), 491-494.
Abstract: Opto-electronic properties of μc-Si:H films prepared by hot-wire/catalytic chemical vapor deposition (HWCVD) and very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) techniques with various silane concentrations (SC) have been investigated using Raman spectroscopy, the steady-state photocarrier grating technique (SSPG), and the steady-state photoconductivity (SSPC). A correlation between the minority carrier transport properties and the microstructure has been found, using the dependence of the diffusion length (Ld) on the SC and Raman intensity ratio (I c RS) representing crystalline volume fractions. I C RS changes from 0.22 to 0.77. Ld increases with increasing Ic RS. It peaks around 0.5 with a maximum value of 270 nm, then decreases. Similar dependences of Ld on I C RS were obtained for films prepared by both HWCVD and VHF-PECVD. However, the grating quality factor measured on highly crystalline HWCVD films is substantially smaller than that found for VHF-PECVD films, indicating a relatively higher surface roughness present in the highly crystalline HWCVD films.
ISSN: 1454-4164
Appears in Collections:Physics / Fizik
Scopus İndeksli Yayınlar Koleksiyonu / Scopus Indexed Publications Collection
WoS İndeksli Yayınlar Koleksiyonu / WoS Indexed Publications Collection

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